Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
BC847BSingle Bipolar Transistors | Anbon Semiconductor | PLASTIC ENCAPSULATE TRANSISTORS | 96385 | - | |
MMBT4401Single Bipolar Transistors | Anbon Semiconductor | GENERAL PURPOSE TRANSISTORS NPN | 133941 | - | |
MMBT5401Single Bipolar Transistors | Anbon Semiconductor | HIGH VOLTAGE PNP TRANSISTOR | 52001 | - | |
MMBT2222ASingle Bipolar Transistors | Anbon Semiconductor | GENERAL PURPOSE TRANSISTOR NPN S | In Stock | - | |
MMBT3904Single Bipolar Transistors | Anbon Semiconductor | 200MA SILICON NPN EPITAXIAL PLAN | In Stock | - | |
MMBT2907ASingle Bipolar Transistors | Anbon Semiconductor | GENERAL PURPOSE PNP TRANSISTOR | 32802 | - | |
MMBT4403Single Bipolar Transistors | Anbon Semiconductor | 600MA SILICON PNP EPITAXIAL PLAN | 110414 | - | |
MMBT5551Single Bipolar Transistors | Anbon Semiconductor | HIGH VOLTAGE TRANSISTORS NPN SIL | 56955 | - | |
BCP56-16Single Bipolar Transistors | Anbon Semiconductor | GENERAL PURPOSE TRANSISTOR NPN S | 13006 | - |