Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Part # | Manufacturer | Description | Availability | Pricing | Quantity |
---|---|---|---|---|---|
![]() NTE3311Single IGBTs | NTE Electronics, Inc. | IGBT-600V 15AMP | 22 | 1+: $13.34000 10+: $12.64000 100+: $11.93000 1000+: $11.65000 | |
![]() NTE3301Single IGBTs | NTE Electronics, Inc. | IGBT-N-CHAN ENHANCEMENT | 18 | 1+: $6.38000 10+: $6.05000 100+: $5.71000 1000+: $5.58000 | |
![]() NTE3302Single IGBTs | NTE Electronics, Inc. | IGBT-N-CHAN ENHANCEMENT | 116 | 1+: $15.65000 10+: $14.82000 100+: $14.00000 1000+: $13.67000 | |
![]() NTE3310Single IGBTs | NTE Electronics, Inc. | IGBT-N-CHAN ENHANCEMENT | 119 | 1+: $11.82000 10+: $11.20000 100+: $10.57000 1000+: $10.33000 | |
![]() NTE3323Single IGBTs | NTE Electronics, Inc. | IGBT-1200V 25AMP | 53 | 1+: $27.66000 10+: $26.21000 100+: $24.75000 1000+: $24.17000 | |
![]() NTE3322Single IGBTs | NTE Electronics, Inc. | IGBT-900V 60AMP | 13 | 1+: $27.66000 10+: $26.21000 100+: $24.75000 1000+: $24.17000 | |
![]() NTE3320Single IGBTs | NTE Electronics, Inc. | IGBT-600V 50AMP | 202 | 1+: $20.78000 10+: $19.68000 100+: $18.59000 1000+: $18.15000 | |
![]() NTE3300Single IGBTs | NTE Electronics, Inc. | IGBT-N-CHAN ENHANCEMENT | 61 | 1+: $6.80000 10+: $6.44000 100+: $6.09000 1000+: $5.94000 | |
![]() SR0805-210-100Single IGBTs | NTE Electronics, Inc. | In Stock | - |