Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
XP10A250YTFET, MOSFET Arrays | YAGEO | MOSFET 2N-CH 100V 2.1A PMPAK | 3000 | - | |
XP4509AGMFET, MOSFET Arrays | YAGEO | MOSFET N AND P-CH 30V 11.2A 8A | 2945 | - | |
XP3700YTFET, MOSFET Arrays | YAGEO | MOSFET N AND P-CH 30V 8.7A 6.1A | 3000 | - | |
XP3832CMTFET, MOSFET Arrays | YAGEO | FET 2N-CH 30V 16A 55A 27A 85A | 2997 | - | |
XP3C023AMTFET, MOSFET Arrays | YAGEO | MOSFET N AND P-CH 30V 12A 10A | 2990 | - | |
XP3700MTFET, MOSFET Arrays | YAGEO | MOSFET N AND P-CH 30V 11A 7.3A | 3000 | - | |
XP3700MFET, MOSFET Arrays | YAGEO | MOSFET N AND P-CH 30V 7.8A 5.5A | 2991 | - | |
XP10C150MFET, MOSFET Arrays | YAGEO | MOSFET N/P-CH 100V 2.5A 8SO | 2988 | - | |
XP2531GYFET, MOSFET Arrays | YAGEO | MOSFET N AND P-CH 16V 3.5A 2.5A | 2990 | - | |
XP2530AGYFET, MOSFET Arrays | YAGEO | MOSFET N AND P-CH 30V 3.3A 2.3A | 3000 | - |