


Alliance Memory, Inc.
AS4C128M16D2-25BINTR
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AS4C128M16D2-25BINTR Description
AS4C128M16D2-25BINTR Description
The AS4C128M16D2-25BINTR is a high-performance, 2Gbit DRAM IC designed for demanding applications requiring fast data access and large memory capacity. Manufactured by Alliance Memory, Inc., this memory IC chip features a parallel memory interface, providing efficient data transfer rates up to 400 MHz. The memory is organized as 128M x 16, offering a robust structure for handling large volumes of data. This volatile memory type ensures data retention only when power is applied, making it ideal for systems requiring frequent data updates.
The AS4C128M16D2-25BINTR is packaged in an 84FBGA format, suitable for surface mount applications, and is available in a tape and reel package for convenient handling and integration into various electronic systems. The memory operates within a voltage range of 1.7V to 1.9V, ensuring compatibility with a wide range of power supplies. With a write cycle time of 15ns, this DRAM IC delivers rapid data writing capabilities, enhancing overall system performance.
AS4C128M16D2-25BINTR Features
- High-Speed Performance: The AS4C128M16D2-25BINTR operates at a clock frequency of 400 MHz, ensuring fast data access and transfer speeds.
- Large Memory Capacity: With a memory size of 2Gbit organized as 128M x 16, this DRAM IC can handle substantial amounts of data, making it suitable for memory-intensive applications.
- Efficient Data Transfer: The parallel memory interface allows for efficient data transfer, optimizing system performance.
- Fast Write Cycle Time: A write cycle time of 15ns ensures rapid data writing, enhancing the responsiveness of the system.
- Wide Voltage Range: The memory operates within a voltage range of 1.7V to 1.9V, providing flexibility in power supply requirements.
- Surface Mount Compatibility: The 84FBGA package is designed for surface mount applications, making it ideal for compact and high-density designs.
- Compliance and Safety: The AS4C128M16D2-25BINTR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards.
- Moisture Sensitivity Level: With an MSL of 3 (168 hours), the memory IC is suitable for environments with varying humidity levels.
AS4C128M16D2-25BINTR Applications
The AS4C128M16D2-25BINTR is ideal for a variety of applications that demand high-speed data processing and large memory capacity. Some specific use cases include:
- Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data transfer and large memory capacity to handle multiple data streams simultaneously.
- Telecommunications: Suitable for base stations and other telecom equipment where rapid data access and high memory density are crucial.
- Industrial Control Systems: Applicable in industrial automation and control systems that require reliable and fast memory solutions to manage complex operations.
- Consumer Electronics: Can be used in high-performance gaming consoles, multimedia devices, and smart TVs where fast data processing and large memory are essential for smooth operation.
- Embedded Systems: Ideal for embedded systems in automotive, aerospace, and medical devices where compact size, high performance, and reliability are paramount.
Conclusion of AS4C128M16D2-25BINTR
The AS4C128M16D2-25BINTR is a high-performance DRAM IC that offers a combination of large memory capacity, fast data access, and efficient data transfer. Its robust technical specifications, including a 400 MHz clock frequency, 15ns write cycle time, and 2Gbit memory size, make it a superior choice for memory-intensive applications. The surface mount compatibility and compliance with environmental and safety standards further enhance its appeal. Whether used in networking equipment, telecommunications, industrial control systems, consumer electronics, or embedded systems, the AS4C128M16D2-25BINTR provides reliable and efficient memory solutions, ensuring optimal performance in demanding environments.



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