Alliance Memory, Inc._AS4C256M16D3B-12BCN
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Alliance Memory, Inc.
AS4C256M16D3B-12BCN

774-AS4C256M16D3B-12BCN
PDF Datasheet
IC DRAM 4GBIT PARALLEL 96FBGA

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Tech Specifications

Clock Frequency
800 MHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
96-FBGA (13.5x9)
Access Time
20 ns
Package / Case
96-TFBGA
Technology
SDRAM - DDR3
Voltage - Supply
1.425V ~ 1.575V
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AS4C256M16D3B-12BCN Description

AS4C256M16D3B-12BCN Description

The AS4C256M16D3B-12BCN is a high-performance, 4Gbit DRAM memory IC designed by Alliance Memory, Inc. This device is organized as 256M x 16 and features a parallel memory interface, making it suitable for a wide range of applications requiring high-speed data access and storage. The AS4C256M16D3B-12BCN operates at a clock frequency of 800 MHz and offers an access time of 20 ns, ensuring rapid data retrieval. It supports a supply voltage range of 1.425V to 1.575V, providing flexibility in power management. The memory is volatile, meaning it requires power to maintain data storage.

AS4C256M16D3B-12BCN Features

  • High-Speed Performance: With an 800 MHz clock frequency and 20 ns access time, the AS4C256M16D3B-12BCN ensures fast data processing and retrieval.
  • Volatile Memory: As a volatile DRAM, it provides dynamic memory storage that is ideal for applications requiring frequent data updates.
  • Flexible Power Supply: Operating within a voltage range of 1.425V to 1.575V, this IC can be integrated into systems with varying power supply requirements.
  • Robust Compliance: The AS4C256M16D3B-12BCN is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards.
  • Moisture Sensitivity Level: With an MSL of 3 (168 Hours), the device is suitable for environments with varying humidity levels.
  • Operating Temperature Range: The IC operates reliably within a temperature range of 0°C to 95°C, making it suitable for industrial and consumer applications.
  • Parallel Memory Interface: The parallel interface allows for efficient data transfer and integration with existing systems.
  • Write Cycle Time: The write cycle time of 15ns ensures efficient data writing operations.

AS4C256M16D3B-12BCN Applications

The AS4C256M16D3B-12BCN is ideal for applications requiring high-speed, dynamic memory storage. Its features make it suitable for:

  • Networking Equipment: High-speed routers and switches benefit from the fast access times and large memory capacity.
  • Industrial Control Systems: The robust operating temperature range and moisture sensitivity level make it ideal for industrial environments.
  • Consumer Electronics: Devices such as gaming consoles and high-end PCs can leverage the high-speed performance for enhanced user experiences.
  • Telecommunications: Base stations and other telecom equipment can utilize the parallel memory interface for efficient data handling.

Conclusion of AS4C256M16D3B-12BCN

The AS4C256M16D3B-12BCN from Alliance Memory, Inc. is a versatile and high-performance DRAM IC that offers significant advantages over similar models. Its combination of high clock frequency, fast access times, and flexible power supply make it a reliable choice for a variety of applications. Despite its obsolete product status, the AS4C256M16D3B-12BCN remains a valuable component for systems requiring high-speed, dynamic memory solutions.

FAQ

What voltage specification is listed for AS4C256M16D3B-12BCN?
The listed voltage-related specification for AS4C256M16D3B-12BCN is 1.425V ~ 1.575V.
Are there related or alternative parts for AS4C256M16D3B-12BCN?
What operating temperature range does AS4C256M16D3B-12BCN support?
What package or case is AS4C256M16D3B-12BCN available in?
What is the mounting type of AS4C256M16D3B-12BCN?
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