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AS4C256M16D3C-10BIN

AS4C256M16D3C-10BIN Description

The AS4C256M16D3C-10BIN is a high-performance DRAM memory IC chip manufactured by Alliance Memory, Inc. This device is designed to deliver exceptional performance and reliability, making it an ideal choice for a wide range of applications. The AS4C256M16D3C-10BIN features a memory organization of 256M x 16, providing a total memory size of 4Gbit. It operates with a clock frequency of 933 MHz and offers an access time of 20 ns, ensuring fast data retrieval and processing capabilities. The memory is volatile, meaning it requires a continuous power supply to retain data.

This IC chip is designed for surface mount applications and comes in a 96FBGA package, which is ideal for compact and high-density designs. The supply voltage range of 1.425V to 1.575V ensures compatibility with modern low-power systems. The AS4C256M16D3C-10BIN also features a write cycle time of 15ns, which enhances its overall performance. The memory interface is parallel, allowing for efficient data transfer and communication with other system components.

AS4C256M16D3C-10BIN Features

• High-Speed Performance: With a clock frequency of 933 MHz and an access time of 20 ns, the AS4C256M16D3C-10BIN ensures rapid data processing, making it suitable for high-performance computing and real-time applications.
• Volatile Memory: The DRAM memory type allows for quick data access and modification, essential for applications requiring frequent data updates.
• Low-Power Operation: The supply voltage range of 1.425V to 1.575V supports energy-efficient designs, making it ideal for battery-operated and low-power systems.
• Robust Packaging: The 96FBGA package and surface mount mounting type provide a compact and durable solution, suitable for high-density and space-constrained applications.
• Compliance and Reliability: The AS4C256M16D3C-10BIN is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance. The moisture sensitivity level (MSL) of 3 (168 hours) guarantees reliability in various environmental conditions.
• Fast Write Cycle Time: A write cycle time of 15ns ensures efficient data storage and retrieval, enhancing overall system performance.

AS4C256M16D3C-10BIN Applications

The AS4C256M16D3C-10BIN is well-suited for applications that require high-speed, high-density memory solutions. Its performance and reliability make it ideal for:

• High-Performance Computing: The fast access and write times are perfect for systems requiring rapid data processing and retrieval.
• Networking Equipment: The robust performance and low-power operation make it suitable for routers, switches, and other networking devices.
• Embedded Systems: The compact and efficient design allows for integration into space-constrained embedded systems, such as IoT devices and industrial controllers.
• Consumer Electronics: The AS4C256M16D3C-10BIN can be used in gaming consoles, smart TVs, and other consumer electronics where high-speed memory is essential.

Conclusion of AS4C256M16D3C-10BIN

The AS4C256M16D3C-10BIN from Alliance Memory, Inc. stands out as a high-performance DRAM memory IC chip, offering a combination of speed, reliability, and efficiency. With its 933 MHz clock frequency, 20 ns access time, and 15 ns write cycle time, this IC chip delivers exceptional performance for demanding applications. The low-power operation, compact 96FBGA package, and surface mount design make it suitable for a wide range of modern electronic systems. Its compliance with environmental and regulatory standards ensures long-term reliability and sustainability. Whether for high-performance computing, networking, embedded systems, or consumer electronics, the AS4C256M16D3C-10BIN is an excellent choice for designers and engineers seeking a reliable and efficient memory solution.