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AS4C256M16D3LB-12BCN

AS4C256M16D3LB-12BCN Description

The AS4C256M16D3LB-12BCN is a high-performance DRAM memory IC chip designed by Alliance Memory, Inc. This chip is part of the obsolete but highly reliable AS4C256 series, offering a memory organization of 256M x 16 and a total memory size of 4Gbit. It features a parallel memory interface and is housed in a 96FBGA package, making it suitable for surface-mount applications. The chip operates within a voltage range of 1.283V to 1.45V and has a clock frequency of 800 MHz, ensuring fast data access with an access time of 20 ns and a write cycle time of 15 ns for both word and page operations. It is designed to operate within a temperature range of 0°C to 95°C, making it suitable for a wide range of industrial and commercial applications. The AS4C256M16D3LB-12BCN is REACH unaffected and ROHS3 compliant, ensuring environmental and regulatory standards are met. It has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure before assembly.

AS4C256M16D3LB-12BCN Features

• High Memory Density: With a memory organization of 256M x 16 and a total capacity of 4Gbit, the AS4C256M16D3LB-12BCN offers significant storage capacity in a compact form factor.
• Fast Access Times: The chip boasts an access time of 20 ns and a write cycle time of 15 ns, ensuring rapid data retrieval and storage, which is critical for high-speed applications.
• Wide Operating Voltage Range: The AS4C256M16D3LB-12BCN operates within a voltage range of 1.283V to 1.45V, providing flexibility and compatibility with various power supply configurations.
• Robust Temperature Range: Designed to function reliably between 0°C and 95°C, this chip is suitable for applications in diverse environments, including industrial and automotive settings.
• Regulatory Compliance: The AS4C256M16D3LB-12BCN is REACH unaffected and ROHS3 compliant, ensuring it meets stringent environmental and regulatory standards.
• Moisture Resistance: With an MSL rating of 3, the chip can withstand up to 168 hours of exposure before assembly, making it suitable for manufacturing processes that may involve delays.
• Parallel Interface: The parallel memory interface allows for efficient data transfer and integration with existing systems that utilize parallel data buses.

AS4C256M16D3LB-12BCN Applications

The AS4C256M16D3LB-12BCN is ideal for applications requiring high-speed, high-density memory solutions. Its robust performance and compatibility make it suitable for:

• Industrial Control Systems: Where reliable and fast memory access is crucial for real-time data processing and control.
• Telecommunications Equipment: For buffering and processing large amounts of data in routers, switches, and base stations.
• Automotive Electronics: In advanced driver-assistance systems (ADAS) and infotainment systems, where high memory density and fast access times are essential.
• Medical Devices: For storing and processing critical medical data in diagnostic equipment and monitoring systems.
• Consumer Electronics: In high-performance gaming consoles, digital cameras, and other devices that require fast and reliable memory.

Conclusion of AS4C256M16D3LB-12BCN

The AS4C256M16D3LB-12BCN is a versatile and high-performance DRAM memory IC chip that offers significant advantages in terms of memory density, access speed, and environmental compliance. Despite its obsolete status, its reliability and compatibility make it a valuable component for various applications. Its fast access times, wide operating voltage range, and robust temperature tolerance ensure it can perform reliably in diverse and demanding environments. The AS4C256M16D3LB-12BCN is an excellent choice for engineers and designers looking for a proven memory solution that meets stringent performance and regulatory standards.