Alliance Memory, Inc.

AS4C512M16D3LC-10BIN

AS4C512M16D3LC-10BIN Description

The AS4C512M16D3LC-10BIN is a high-performance DRAM memory IC chip designed by Alliance Memory, Inc. This 8Gbit memory device is organized as 512M x 16 and features a parallel memory interface, making it suitable for applications requiring high-speed data transfer and efficient memory management. The AS4C512M16D3LC-10BIN operates at a clock frequency of 933 MHz, ensuring rapid processing and data handling capabilities. It is packaged in a 96FBGA form factor, which is ideal for surface mount applications, providing a compact and reliable solution for modern electronic systems.

AS4C512M16D3LC-10BIN Features

• High-Speed Performance: With a clock frequency of 933 MHz and an access time of 20 ns, the AS4C512M16D3LC-10BIN delivers exceptional performance, making it suitable for demanding applications that require rapid data processing.
• Volatile Memory: As a DRAM device, the AS4C512M16D3LC-10BIN provides volatile memory storage, ensuring data is retained only while power is supplied. This is ideal for applications where data needs to be quickly accessed and modified.
• Low Power Consumption: The device operates within a voltage range of 1.283V to 1.45V, contributing to energy efficiency and reduced power consumption, which is crucial for battery-operated and energy-sensitive applications.
• Compliance and Reliability: The AS4C512M16D3LC-10BIN is REACH unaffected and RoHS3 compliant, ensuring it meets the highest environmental and safety standards. Additionally, its moisture sensitivity level (MSL) of 3 (168 hours) makes it suitable for a wide range of manufacturing environments.
• Write Cycle Efficiency: The write cycle time for words and pages is 15ns, ensuring efficient data writing and minimizing latency, which is essential for applications requiring frequent data updates.

AS4C512M16D3LC-10BIN Applications

The AS4C512M16D3LC-10BIN is ideal for a variety of applications that demand high-speed, efficient memory solutions. Its parallel memory interface and high clock frequency make it particularly suitable for:

• Networking Equipment: Routers, switches, and other networking devices that require rapid data processing and efficient memory management.
• Telecommunications: Base stations and other telecommunication infrastructure that need reliable and high-speed memory solutions.
• Industrial Control Systems: PLCs, automation controllers, and other industrial applications that require robust and efficient memory for real-time data processing.
• Consumer Electronics: High-performance gaming consoles, multimedia devices, and other consumer electronics that benefit from fast and reliable memory.

Conclusion of AS4C512M16D3LC-10BIN

The AS4C512M16D3LC-10BIN from Alliance Memory, Inc. stands out as a high-performance DRAM memory IC chip, offering a combination of speed, efficiency, and reliability. Its 933 MHz clock frequency, 20 ns access time, and 15 ns write cycle time make it a superior choice for applications requiring rapid data processing and efficient memory management. The device's low power consumption, compliance with environmental standards, and robust packaging further enhance its appeal. Whether used in networking equipment, telecommunications, industrial control systems, or consumer electronics, the AS4C512M16D3LC-10BIN provides a reliable and efficient memory solution that meets the demands of modern electronic systems.