
Alliance Memory, Inc.
AS4C64M16D3B-12BINTR
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AS4C64M16D3B-12BINTR Description
AS4C64M16D3B-12BINTR Description
The AS4C64M16D3B-12BINTR is a high-performance, 1 Gbit DRAM memory IC chip designed for demanding applications requiring fast data access and reliable performance. Manufactured by Alliance Memory, Inc., this chip features a parallel memory interface and is housed in a 96FBGA package, making it suitable for surface-mount applications. With a clock frequency of 800 MHz and an access time of 20 ns, the AS4C64M16D3B-12BINTR delivers exceptional speed and efficiency. It operates within a supply voltage range of 1.425V to 1.575V, ensuring compatibility with a variety of power supply configurations. The memory is organized as 64M x 16, providing a robust capacity for data storage and retrieval. The chip is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards. Additionally, it has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure period, which is ideal for manufacturing processes involving reflow soldering.
AS4C64M16D3B-12BINTR Features
- High-Speed Performance: The AS4C64M16D3B-12BINTR boasts a clock frequency of 800 MHz and an access time of 20 ns, ensuring rapid data retrieval and processing. This makes it ideal for applications requiring high-speed data handling.
- Volatile Memory: As a DRAM device, the AS4C64M16D3B-12BINTR provides volatile memory, which is essential for applications needing fast read and write operations.
- Parallel Interface: The parallel memory interface allows for efficient data transfer and is well-suited for systems that require high bandwidth and low latency.
- Wide Operating Voltage Range: The chip operates within a supply voltage range of 1.425V to 1.575V, offering flexibility in power supply design.
- Robust Capacity: With a memory organization of 64M x 16, the AS4C64M16D3B-12BINTR provides a total memory size of 1 Gbit, making it suitable for applications requiring substantial memory capacity.
- Environmental Compliance: The AS4C64M16D3B-12BINTR is REACH unaffected and RoHS3 compliant, ensuring it meets the latest environmental and safety standards.
- Moisture Sensitivity Level: The MSL of 3 (168 hours) makes the chip suitable for manufacturing processes involving reflow soldering, ensuring reliability and durability.
- Surface-Mount Compatibility: The 96FBGA package is designed for surface-mount technology, facilitating easy integration into modern electronic systems.
AS4C64M16D3B-12BINTR Applications
The AS4C64M16D3B-12BINTR is well-suited for a variety of applications that demand high-speed, high-capacity memory solutions. Some specific use cases include:
- Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and storage.
- Telecommunications: Suitable for base stations and other telecom infrastructure that need reliable and high-speed memory.
- Industrial Control Systems: Applicable in industrial automation and control systems where rapid data access and processing are critical.
- Medical Equipment: Can be used in medical imaging and diagnostic equipment that require high-speed data handling and storage.
- Consumer Electronics: Appropriate for high-end consumer electronics such as gaming consoles and multimedia devices that demand fast and efficient memory solutions.
Conclusion of AS4C64M16D3B-12BINTR
The AS4C64M16D3B-12BINTR is a versatile and high-performance DRAM memory IC chip that offers significant advantages over similar models. Its combination of high-speed performance, robust capacity, and environmental compliance makes it an ideal choice for a wide range of applications. Whether used in networking equipment, telecommunications, industrial control systems, medical devices, or consumer electronics, the AS4C64M16D3B-12BINTR delivers reliable and efficient memory solutions. Its surface-mount compatibility and moisture sensitivity level further enhance its suitability for modern manufacturing processes. Overall, the AS4C64M16D3B-12BINTR stands out as a reliable and high-performance memory solution for demanding electronic applications.



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