
Alliance Memory, Inc.
AS4C64M16D3LA-12BINTR
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
AS4C64M16D3LA-12BINTR Description
AS4C64M16D3LA-12BINTR Description
The AS4C64M16D3LA-12BINTR is a high-performance DRAM memory IC chip designed by Alliance Memory, Inc. This 1Gbit memory device is organized as 64M x 16, offering a robust solution for applications requiring significant memory capacity and fast data access. The chip operates with a clock frequency of 800 MHz and features an access time of 20 ns, ensuring rapid data retrieval and processing. The memory is volatile, meaning it requires a continuous power supply to retain data, and it operates within a voltage range of 1.283V to 1.45V.
The AS4C64M16D3LA-12BINTR is packaged in a 96FBGA format, making it suitable for surface-mount applications. It is compliant with REACH and ROHS3 standards, ensuring it meets environmental and safety regulations. The memory interface is parallel, allowing for efficient data transfer. The chip also features a write cycle time of 15ns, further enhancing its performance capabilities. The moisture sensitivity level (MSL) is rated at 3, allowing for a 168-hour exposure period, making it suitable for various manufacturing processes.
AS4C64M16D3LA-12BINTR Features
- High Memory Capacity: With a 1Gbit memory size, the AS4C64M16D3LA-12BINTR provides substantial storage for data-intensive applications.
- Fast Access and Write Times: The 20 ns access time and 15 ns write cycle time ensure efficient data handling, making it ideal for high-speed processing environments.
- Wide Voltage Range: The operational voltage range of 1.283V to 1.45V offers flexibility and compatibility with various power supply systems.
- Compliance and Safety: The chip is REACH unaffected and ROHS3 compliant, ensuring it meets stringent environmental and safety standards.
- Moisture Resistance: An MSL rating of 3 (168 hours) provides robustness against moisture, enhancing reliability during manufacturing and storage.
- Parallel Interface: The parallel memory interface allows for efficient data transfer, suitable for applications requiring rapid data exchange.
AS4C64M16D3LA-12BINTR Applications
The AS4C64M16D3LA-12BINTR is ideal for a variety of applications that demand high memory capacity and fast data access. Its performance characteristics make it suitable for:
- Networking Equipment: High-speed routers and switches can benefit from the fast access times and large memory capacity.
- Telecommunications: Base stations and other communication infrastructure can leverage the chip's robust performance.
- Industrial Control Systems: Real-time data processing and control systems require the rapid access and write capabilities offered by this DRAM.
- Consumer Electronics: High-definition televisions, gaming consoles, and other consumer devices can utilize the chip for efficient data handling.
- Embedded Systems: The chip's compact size and surface-mount package make it suitable for embedded systems where space is a constraint.
Conclusion of AS4C64M16D3LA-12BINTR
The AS4C64M16D3LA-12BINTR is a versatile and high-performance DRAM memory IC chip that offers significant advantages over similar models. Its combination of high memory capacity, fast access and write times, and compliance with environmental and safety standards make it an ideal choice for a wide range of applications. Whether used in networking equipment, telecommunications, industrial control systems, consumer electronics, or embedded systems, the AS4C64M16D3LA-12BINTR provides reliable and efficient memory solutions.



.png)

















.png?x-oss-process=image/format,webp/resize,h_32)










