Alliance Memory, Inc._AS4C8M16D1-5TINTR
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Alliance Memory, Inc.
AS4C8M16D1-5TINTR

774-AS4C8M16D1-5TINTR
PDF Datasheet
IC DRAM 128MBIT PAR 66TSOP II

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Tech Specifications

Clock Frequency
200 MHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
66-TSOP II
Access Time
700 ps
Package / Case
66-TSSOP (0.400", 10.16mm Width)
Technology
SDRAM - DDR
Voltage - Supply
2.3V ~ 2.7V
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AS4C8M16D1-5TINTR Description

AS4C8M16D1-5TINTR Description

The AS4C8M16D1-5TINTR is a 128Mbit DRAM memory IC from Alliance Memory, Inc., designed for high-performance applications requiring fast access times and reliable data storage. This IC features a parallel memory interface and is organized as 8M x 16, providing a robust solution for systems needing significant memory capacity. The device operates within a supply voltage range of 2.3V to 2.7V and supports a clock frequency of 200 MHz, ensuring compatibility with a wide range of modern electronic systems. With an access time of 700 picoseconds and a write cycle time of 15 nanoseconds, the AS4C8M16D1-5TINTR delivers exceptional speed and efficiency.

AS4C8M16D1-5TINTR Features

  • High-Speed Performance: The AS4C8M16D1-5TINTR boasts an ultra-fast access time of 700 picoseconds and a write cycle time of 15 nanoseconds, making it suitable for applications requiring rapid data processing and storage.
  • Volatile Memory: As a DRAM device, it provides volatile memory storage, which is ideal for applications where data needs to be read quickly and written.
  • Wide Operating Voltage Range: The IC operates within a supply voltage range of 2.3V to 2.7V, offering flexibility in power supply design.
  • Parallel Interface: The parallel memory interface ensures compatibility with various system architectures and simplifies integration into existing designs.
  • Robust Packaging: The AS4C8M16D1-5TINTR is available in a 66-TSOP II package, which is suitable for surface mount applications and provides a compact footprint.
  • Compliance and Safety: The device is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards.
  • Moisture Sensitivity Level: With an MSL of 3 (168 hours), the IC is suitable for use in environments with varying humidity levels.

AS4C8M16D1-5TINTR Applications

The AS4C8M16D1-5TINTR is ideal for a variety of applications that demand high-speed, reliable memory solutions. Some specific use cases include:

  • Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data access and storage.
  • Telecommunications: Suitable for base stations and other telecom equipment where rapid data processing crucial is.
  • Industrial Control Systems: Provides the necessary memory capacity and speed for industrial automation and control systems.
  • Consumer Electronics: Can be used in high-performance gaming consoles, multimedia devices, and other consumer electronics requiring significant memory.

Conclusion of AS4C8M16D1-5TINTR

The AS4C8M16D1-5TINTR from Alliance Memory, Inc., offers a high-performance, reliable DRAM solution with a 128Mbit capacity and ultra-fast access times. Its robust features, including a wide operating voltage range, parallel interface, and compliance with environmental standards, make it a versatile choice for a variety of applications. Despite its obsolete status, the AS4C8M16D1-5TINTR remains a valuable component for systems where its unique performance benefits are required.

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