Alliance Memory, Inc._AS4C8M16SA-6BANTR
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Alliance Memory, Inc.
AS4C8M16SA-6BANTR

774-AS4C8M16SA-6BANTR
PDF Datasheet
IC DRAM 128MBIT PAR 54TFBGA
16 Weeks

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Tech Specifications

Clock Frequency
166 MHz
Memory Type
Volatile
Product Status
Active
Supplier Device Package
54-TFBGA (8x8)
Access Time
5 ns
Package / Case
54-TFBGA
Technology
SDRAM
Voltage - Supply
3V ~ 3.6V
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AS4C8M16SA-6BANTR Description

AS4C8M16SA-6BANTR Description

The AS4C8M16SA-6BANTR is a high-performance, synchronous DRAM (SDRAM) memory IC chip manufactured by Alliance Memory, Inc. This chip is designed for demanding applications requiring fast access times and reliable performance. The AS4C8M16SA-6BANTR features a memory organization of 8M x 16, providing a total memory size of 128 Mbit. It operates with a clock frequency of 166 MHz and offers an access time of 5 ns, ensuring rapid data retrieval and processing capabilities. The chip is designed for surface-mount applications and is housed in a 54-TFBGA package, making it suitable for compact and high-density designs.

AS4C8M16SA-6BANTR Features

  • High-Speed Performance: With a clock frequency of 166 MHz and an access time of 5 ns, the AS4C8M16SA-6BANTR ensures rapid data access and processing, making it ideal for high-speed applications.
  • Volatile Memory Type: As a volatile SDRAM, it provides fast read/write capabilities, essential for dynamic data storage and retrieval.
  • Wide Voltage Range: The chip operates within a voltage range of 3V to 3.6V, offering flexibility in power supply requirements.
  • Automotive Grade: Certified for automotive use, the AS4C8M16SA-6BANTR meets the stringent reliability and performance standards required for automotive applications.
  • Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the chip is suitable for environments with varying humidity levels, ensuring long-term reliability.
  • Compliance and Standards: The AS4C8M16SA-6BANTR is REACH unaffected and RoHS3 compliant, adhering to environmental and safety regulations.
  • Write Cycle Time: A write cycle time of 12 ns ensures efficient data writing, enhancing overall system performance.
  • Parallel Memory Interface: The parallel interface allows for straightforward integration with existing systems, facilitating easy implementation.

AS4C8M16SA-6BANTR Applications

The AS4C8M16SA-6BANTR is well-suited for a variety of applications, particularly those requiring high-speed data processing and reliable memory performance. Key applications include:

  • Automotive Systems: Ideal for automotive infotainment systems, advanced driver-assistance systems (ADAS), and other automotive electronics where fast data access and reliability are critical.
  • Industrial Control Systems: Suitable for industrial automation and control systems that require rapid data processing and high reliability.
  • Telecommunications: Applicable in telecommunication infrastructure, such as base stations and routers, where high-speed data transfer and storage are essential.
  • Consumer Electronics: Can be used in high-performance consumer electronics, such as gaming consoles and multimedia devices, to enhance user experience through faster data access.

Conclusion of AS4C8M16SA-6BANTR

The AS4C8M16SA-6BANTR is a robust and high-performance SDRAM memory IC chip that offers significant advantages over similar models. Its combination of fast access times, high clock frequency, and automotive-grade reliability makes it an ideal choice for applications requiring rapid data processing and high reliability. With its wide voltage range, compliance with environmental standards, and efficient write cycle time, the AS4C8M16SA-6BANTR stands out as a versatile and reliable memory solution for a variety of industries.

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