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AS4C8M16SA-6TINTR

AS4C8M16SA-6TINTR Description

The AS4C8M16SA-6TINTR is a high-performance SDRAM memory IC chip manufactured by Alliance Memory, Inc. This chip is designed to provide reliable and efficient data storage solutions for various electronic applications. With a memory size of 128 Mbit organized as 8M x 16, the AS4C8M16SA-6TINTR offers a robust memory format suitable for demanding applications. The chip operates with a clock frequency of 166 MHz and an access time of 5 ns, ensuring fast data retrieval and processing. The memory is volatile, meaning it requires a continuous power supply to retain data, and it operates within a voltage range of 3V to 3.6V.

The AS4C8M16SA-6TINTR is housed in a 54TSOP II package, making it ideal for surface mount applications. It is RoHS3 compliant and REACH unaffected, ensuring it meets the latest environmental and safety standards. The chip has a moisture sensitivity level (MSL) of 3, allowing for a storage time of 168 hours under specified conditions. The memory interface is parallel, and the write cycle time is 12 ns, further enhancing its performance capabilities.

AS4C8M16SA-6TINTR Features

• High-Speed Performance: With a clock frequency of 166 MHz and an access time of 5 ns, the AS4C8M16SA-6TINTR ensures rapid data processing and retrieval, making it suitable for applications requiring high-speed memory solutions.
• Robust Memory Organization: The 8M x 16 memory organization provides a total memory size of 128 Mbit, offering ample storage capacity for various applications.
• Volatile Memory: The SDRAM technology ensures that data is retained only while the power supply is active, which is ideal for applications where data integrity is maintained through continuous power.
• Wide Voltage Range: The chip operates within a voltage range of 3V to 3.6V, providing flexibility in power supply requirements.
• Environmental Compliance: The AS4C8M16SA-6TINTR is RoHS3 compliant and REACH unaffected, ensuring it meets stringent environmental and safety standards.
• Surface Mount Compatibility: The 54TSOP II package is designed for surface mount technology, making it suitable for modern PCB designs and manufacturing processes.
• Moisture Sensitivity Level: With an MSL of 3, the chip can be stored for up to 168 hours under specified conditions, ensuring reliability and longevity.
• Parallel Memory Interface: The parallel interface allows for efficient data transfer and integration with various systems.
• Fast Write Cycle Time: The 12 ns write cycle time ensures quick data writing capabilities, enhancing overall system performance.

AS4C8M16SA-6TINTR Applications

The AS4C8M16SA-6TINTR is ideal for a wide range of applications requiring high-speed, volatile memory solutions. Some specific use cases include:

• Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and retrieval.
• Telecommunications: Suitable for base stations and other telecommunication equipment where high-speed memory is essential.
• Industrial Control Systems: Applicable in automation and control systems where reliable and fast memory is crucial for real-time data processing.
• Consumer Electronics: Can be used in high-performance consumer electronics such as gaming consoles, multimedia devices, and smart TVs.
• Embedded Systems: Perfect for embedded systems in automotive, aerospace, and other industries where compact and efficient memory solutions are required.

Conclusion of AS4C8M16SA-6TINTR

The AS4C8M16SA-6TINTR from Alliance Memory, Inc. is a versatile and high-performance SDRAM memory IC chip that offers significant advantages over similar models. Its robust memory organization, fast access times, and wide voltage range make it suitable for a variety of applications. The chip's compliance with environmental standards and its compatibility with surface mount technology further enhance its appeal. Whether used in networking equipment, telecommunications, industrial control systems, consumer electronics, or embedded systems, the AS4C8M16SA-6TINTR provides reliable and efficient memory solutions, making it a valuable component in modern electronic designs.