Alliance Memory, Inc. Tariff Inquiry

AS6C1008-55TIN

AS6C1008-55TIN Description

The AS6C1008-55TIN is a high-performance, 1 Mbit static random access memory (SRAM) device from Alliance Memory, Inc. This IC is designed for applications requiring fast access times and reliable data storage. The AS6C1008-55TIN features a parallel memory interface, providing efficient data transfer capabilities. It is organized as 128K x 8, meaning it has 128,000 words of memory, each 8 bits wide. The device operates within a wide supply voltage range of 2.7V to 5.5V, making it versatile for various power supply configurations. With an access time of 55 nanoseconds and a write cycle time of 55 nanoseconds, the AS6C1008-55TIN ensures rapid data read and write operations. The memory is volatile, meaning it retains data only while power is applied, which is ideal for applications requiring frequent data updates. The AS6C1008-55TIN is packaged in a 32TSOP format and is available in a tray package, suitable for surface mount applications. It is compliant with REACH and ROHS3 regulations, ensuring environmental safety and reliability. The device is classified under HTSUS code 8542.32.0041 and has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure to ambient conditions before assembly.

AS6C1008-55TIN Features

• High-Speed Performance: The AS6C1008-55TIN offers an access time of 55 nanoseconds and a write cycle time of 55 nanoseconds, ensuring rapid data processing and minimal latency.
• Wide Operating Voltage Range: The device operates reliably within a supply voltage range of 2.7V to 5.5V, providing flexibility for different power supply requirements.
• Parallel Memory Interface: The parallel interface facilitates efficient data transfer, making it suitable for applications requiring high-speed data access.
• Volatile Memory: As a volatile SRAM, the AS6C1008-55TIN is ideal for applications that require frequent data updates and dynamic memory management.
• Surface Mount Compatibility: The 32TSOP package is designed for surface mount technology, ensuring ease of integration into modern electronic designs.
• Environmental Compliance: The AS6C1008-55TIN is REACH unaffected and ROHS3 compliant, meeting stringent environmental standards.
• Moisture Sensitivity Level 3: With an MSL of 3, the device can be exposed to ambient conditions for up to 168 hours before assembly, enhancing manufacturing flexibility.

AS6C1008-55TIN Applications

The AS6C1008-55TIN is well-suited for a variety of applications where high-speed data access and reliable memory performance are critical. Some specific use cases include:

• Embedded Systems: Ideal for embedded systems requiring fast data processing and dynamic memory management.
• Industrial Control: Suitable for industrial applications where rapid data access and reliable memory performance are essential.
• Telecommunications: Effective in telecommunications equipment that demands high-speed data transfer and low latency.
• Consumer Electronics: Applicable in consumer electronics where fast memory access enhances user experience.
• Automotive Systems: Suitable for automotive applications requiring robust and reliable memory solutions.

Conclusion of AS6C1008-55TIN

The AS6C1008-55TIN from Alliance Memory, Inc. is a high-performance SRAM device that offers a unique combination of speed, reliability, and flexibility. Its fast access times, wide operating voltage range, and parallel memory interface make it an excellent choice for applications requiring rapid data processing and dynamic memory management. The device's environmental compliance and surface mount compatibility further enhance its suitability for modern electronic designs. Whether used in embedded systems, industrial control, telecommunications, consumer electronics, or automotive applications, the AS6C1008-55TIN provides a reliable and efficient memory solution.