Alliance Memory, Inc._AS6C1616-55BIN
original

Alliance Memory, Inc.
AS6C1616-55BIN

774-AS6C1616-55BIN
PDF Datasheet
IC SRAM 16MBIT PARALLEL 48TFBGA

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B2A
Memory Organization
1M x 16
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
48-TFBGA (6x8)
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AS6C1616-55BIN Description

AS6C1616-55BIN Description

The AS6C1616-55BIN is a high-performance, parallel interface Static Random Access Memory (SRAM) IC developed by Alliance Memory, Inc. This 16Mbit SRAM device is organized as 1M x 16, offering robust performance and reliability for a variety of applications. The AS6C1616-55BIN features a 55 ns access time and a 55 ns write cycle time, ensuring rapid data retrieval and storage. It operates within a supply voltage range of 2.7V to 3.6V, making it suitable for systems requiring low to moderate power consumption. The device is packaged in a 48-TFBGA format, designed for surface mount applications, and is compliant with RoHS3 standards, ensuring environmental sustainability. The AS6C1616-55BIN is also REACH unaffected, adhering to stringent chemical regulations. Despite being marked as obsolete, this product remains a viable option for legacy systems and specific applications where its technical specifications are still relevant.

AS6C1616-55BIN Features

  • Memory Organization: 1M x 16, providing a total memory capacity of 16Mbit.
  • Access Time: 55 ns, ensuring fast data access and retrieval.
  • Write Cycle Time: 55 ns, facilitating rapid data writing.
  • Memory Type: Volatile SRAM, offering high-speed read/write capabilities.
  • Memory Interface: Parallel, allowing for efficient data transfer.
  • Supply Voltage: 2.7V to 3.6V, suitable for a range of power supply requirements.
  • Mounting Type: Surface Mount, ideal for modern PCB designs.
  • Package: 48-TFBGA, offering a compact and reliable form factor.
  • Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory standards.
  • Moisture Sensitivity Level (MSL): Level 3 (168 hours), suitable for standard manufacturing processes.

AS6C1616-55BIN Applications

The AS6C1616-55BIN is well-suited for applications requiring high-speed, reliable memory solutions. Its 1M x 16 memory organization and 55 ns access time make it ideal for:

  • Embedded Systems: Providing fast, volatile memory storage for microcontrollers and microprocessors.
  • Networking Equipment: Enabling rapid data buffering and processing in routers and switches.
  • Industrial Control Systems: Offering reliable memory for programmable logic controllers (PLCs) and other industrial applications.
  • Telecommunications: Supporting high-speed data storage and retrieval in communication systems.
  • Consumer Electronics: Enhancing performance in devices such as gaming consoles and digital cameras.

Conclusion of AS6C1616-55BIN

The AS6C1616-55BIN, developed by Alliance Memory, Inc., is a robust SRAM IC that delivers high performance and reliability. Its 1M x 16 memory organization, 55 ns access time, and 55 ns write cycle time make it a standout choice for applications requiring rapid data access and storage. The device's surface mount packaging and compliance with RoHS3 and REACH standards ensure it meets modern manufacturing and environmental requirements. Although marked as obsolete, the AS6C1616-55BIN remains a valuable component for legacy systems and specific applications where its technical specifications are still advantageous.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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