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AS6C2008A-55BINTR

AS6C2008A-55BINTR Description

The AS6C2008A-55BINTR is a high-performance, 2Mbit Static Random Access Memory (SRAM) chip designed for a wide range of applications requiring fast access times and reliable data storage. Manufactured by Alliance Memory, Inc., this IC features a parallel memory interface and is organized in a 256K x 8 memory format. The device is housed in a 36-TFBGA package, suitable for surface mount applications, and operates within a voltage range of 2.7V to 5.5V. With an access time of 55 nanoseconds and a write cycle time of 55 nanoseconds, the AS6C2008A-55BINTR ensures rapid data retrieval and storage, making it ideal for demanding electronic systems.

AS6C2008A-55BINTR Features

• Memory Size and Organization: The AS6C2008A-55BINTR offers a total memory size of 2Mbit, organized as 256K x 8, providing ample storage for data-intensive applications.
• Fast Access Time: With an access time of 55 nanoseconds, this SRAM chip ensures quick data retrieval, enhancing the overall performance of the system.
• Write Cycle Time: The write cycle time of 55 nanoseconds ensures efficient data storage without compromising speed.
• Voltage Range: The device operates within a wide voltage range of 2.7V to 5.5V, making it versatile for various power supply configurations.
• Surface Mount Packaging: The 36-TFBGA package is designed for surface mount technology, facilitating easy integration into compact and high-density PCB designs.
• Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the AS6C2008A-55BINTR is suitable for manufacturing environments that require protection against moisture.
• Compliance: The chip is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards.
• Memory Interface: The parallel memory interface allows for straightforward integration with existing systems and ensures compatibility with a wide range of controllers.
• Volatile Memory: As a volatile memory type, the AS6C2008A-55BINTR retains data only while power is supplied, making it suitable for applications where data integrity is maintained through continuous power.

AS6C2008A-55BINTR Applications

The AS6C2008A-55BINTR is well-suited for a variety of applications that demand high-speed data access and reliable storage. Some specific use cases include:

• Telecommunications: Ideal for buffering and temporary storage in communication systems, ensuring fast data transfer and processing.
• Industrial Automation: Used in programmable logic controllers (PLCs) and other automation systems where rapid data access is crucial for real-time control.
• Consumer Electronics: Suitable for devices such as gaming consoles, digital cameras, and high-end multimedia systems that require fast memory access to enhance user experience.
• Medical Devices: Employed in diagnostic equipment and monitoring systems where quick data retrieval and storage are essential for accurate and timely results.
• Automotive Systems: Used in advanced driver-assistance systems (ADAS) and infotainment systems, providing fast access to critical data for enhanced performance and safety.

Conclusion of AS6C2008A-55BINTR

The AS6C2008A-55BINTR from Alliance Memory, Inc. stands out as a reliable and high-performance SRAM solution for applications requiring fast data access and storage. Its 55 nanosecond access and write cycle times, combined with a wide operating voltage range and surface mount packaging, make it a versatile choice for modern electronic systems. The chip's compliance with environmental and safety standards further enhances its appeal in the electronics industry. Whether used in telecommunications, industrial automation, or consumer electronics, the AS6C2008A-55BINTR delivers the performance and reliability needed to meet the demands of today's advanced applications.