Alliance Memory, Inc._AS6C4016-55BIN
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Alliance Memory, Inc.
AS6C4016-55BIN

774-AS6C4016-55BIN
PDF Datasheet
IC SRAM 4MBIT PARALLEL 48TFBGA
16 Weeks

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B2A
Memory Organization
256K x 16
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Active
Supplier Device Package
48-TFBGA (6x8)
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AS6C4016-55BIN Description

AS6C4016-55BIN Description

The AS6C4016-55BIN is a high-performance, 4 Mbit Static Random Access Memory (SRAM) IC designed for a wide range of applications requiring fast access times and reliable data storage. Manufactured by Alliance Memory, Inc., this SRAM device is organized as 256K x 16, offering a parallel memory interface that ensures efficient data transfer and processing. The AS6C4016-55BIN operates within a voltage range of 2.7V to 5.5V, making it suitable for various power supply configurations. With an access time of 55 nanoseconds and a write cycle time of 55 nanoseconds, this SRAM IC delivers exceptional performance, ensuring minimal latency and high-speed data access. The device is available in a 48-TFBGA package, which is ideal for surface mount applications and provides a compact footprint for space-constrained designs. The AS6C4016-55BIN is REACH unaffected and RoHS3 compliant, meeting the stringent environmental and regulatory standards of the electronics industry.

AS6C4016-55BIN Features

  • Memory Organization: 256K x 16 configuration, providing a total memory capacity of 4 Mbit.
  • Access Time: 55 nanoseconds, ensuring rapid data retrieval and minimal latency.
  • Write Cycle Time: 55 nanoseconds, enabling quick data write operations.
  • Voltage Range: Operates within a wide voltage range of 2.7V to 5.5V, offering flexibility in power supply requirements.
  • Memory Interface: Parallel interface for efficient data transfer and compatibility with various systems.
  • Package Type: 48-TFBGA, suitable for surface mount applications and providing a compact footprint.
  • Compliance: REACH unaffected and RoHS3 compliant, ensuring environmental and regulatory standards are met.
  • Moisture Sensitivity Level (MSL): Level 3 (168 hours), indicating the device's robustness against moisture exposure during manufacturing and storage.

AS6C4016-55BIN Applications

The AS6C4016-55BIN is ideal for applications that require fast, reliable, and volatile memory solutions. Its high-speed access and write times make it suitable for real-time data processing and storage. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems requiring fast memory access, such as industrial control systems, medical devices, and automotive electronics.
  • Networking Equipment: Suitable for networking devices where rapid data retrieval and storage are critical, such as routers and switches.
  • Telecommunications: Used in telecommunication infrastructure for temporary data storage and processing, ensuring minimal latency and high reliability.
  • Consumer Electronics: Applicable in consumer electronics that require fast memory access, such as gaming consoles and high-performance computing devices.

Conclusion of AS6C4016-55BIN

The AS6C4016-55BIN from Alliance Memory, Inc. is a versatile and high-performance SRAM IC that offers a robust solution for applications requiring fast and reliable memory. With its 55 nanosecond access and write times, wide voltage range, and compact 48-TFBGA package, this device stands out in the market. Its compliance with REACH and RoHS3 standards ensures that it meets the environmental and regulatory requirements of the electronics industry. The AS6C4016-55BIN is an excellent choice for designers looking for a high-speed, reliable, and environmentally friendly SRAM solution.

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