Alliance Memory, Inc._AS6C8016-55ZIN
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Alliance Memory, Inc.
AS6C8016-55ZIN

774-AS6C8016-55ZIN
PDF Datasheet
IC SRAM 8MBIT PARALLEL 44TSOP II
12 Weeks

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B2A
Memory Organization
512K x 16
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Active
Supplier Device Package
44-TSOP II
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AS6C8016-55ZIN Description

AS6C8016-55ZIN Description

The AS6C8016-55ZIN is a high-performance, 8Mbit Static Random Access Memory (SRAM) IC designed for a wide range of applications requiring fast access times and reliable data storage. Manufactured by Alliance Memory, Inc., this SRAM device features a parallel memory interface and is organized into 512K x 16 memory format, providing a total memory capacity of 8Mbit. The AS6C8016-55ZIN is housed in a 44-pin TSOP II package, making it suitable for surface-mount applications.

This SRAM IC operates within a wide supply voltage range of 2.7V to 5.5V, ensuring compatibility with various power supply configurations. The device boasts a fast access time of 55 nanoseconds and a write cycle time of 55 nanoseconds, making it ideal for high-speed data processing and storage tasks. The AS6C8016-55ZIN is classified under ECCN 3A991B2A and HTSUS 8542.32.0041, and it is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards.

AS6C8016-55ZIN Features

  • Memory Organization: 512K x 16, providing a total memory capacity of 8Mbit.
  • Access Time: 55 ns, ensuring rapid data retrieval.
  • Write Cycle Time: 55 ns, facilitating quick data writes.
  • Memory Type: Volatile SRAM, offering fast read and write speeds.
  • Memory Interface: Parallel, allowing for efficient data transfer.
  • Supply Voltage: 2.7V to 5.5V, providing flexibility in power supply options.
  • Package Type: 44-pin TSOP II, suitable for surface-mount applications.
  • Moisture Sensitivity Level (MSL): Level 3 (168 hours), ensuring reliability in various environmental conditions.
  • Compliance: REACH unaffected and RoHS3 compliant, meeting industry environmental and safety standards.

AS6C8016-55ZIN Applications

The AS6C8016-55ZIN is ideal for applications that require fast, reliable, and high-capacity memory solutions. Its 512K x 16 memory organization and fast access times make it suitable for:

  • Embedded Systems: Providing fast, temporary storage for critical data in embedded devices.
  • Networking Equipment: Enabling rapid data buffering and processing in routers and switches.
  • Industrial Control Systems: Offering reliable memory for real-time control and monitoring applications.
  • Consumer Electronics: Enhancing performance in devices such as gaming consoles and high-end multimedia systems.
  • Automotive Systems: Supporting fast data processing in advanced driver-assistance systems (ADAS) and infotainment systems.

Conclusion of AS6C8016-55ZIN

The AS6C8016-55ZIN from Alliance Memory, Inc. is a versatile and high-performance SRAM IC that stands out in its category due to its fast access and write cycle times, wide supply voltage range, and compliance with industry standards. Its 512K x 16 memory organization and 8Mbit capacity make it an excellent choice for applications requiring high-speed data processing and reliable storage. The device's surface-mount package and moisture sensitivity level ensure it is suitable for a variety of industrial and consumer applications. Overall, the AS6C8016-55ZIN offers a robust and reliable memory solution for modern electronic systems.

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Availability (In Stock : 1534 )
Quantity Unit Price Ext. Price
1+ $6.97840 $6.98
10+ $6.49176 $64.92
25+ $6.29411 $157.35
50+ $6.14451 $307.23
135+ $5.93172 $800.78
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