Alliance Memory, Inc._N25Q064A13EF640E
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Alliance Memory, Inc.
N25Q064A13EF640E

774-N25Q064A13EF640E
PDF Datasheet
IC FLASH 64MBIT SPI 8VDFPN
8 Weeks

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Tech Specifications

Clock Frequency
108 MHz
Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
SPI
ECCN
3A991B1A
Memory Organization
16M x 4
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Active
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N25Q064A13EF640E Description

N25Q064A13EF640E Description

The N25Q064A13EF640E is a high-performance, 64Mbit Flash memory IC designed for a wide range of applications requiring reliable and efficient data storage. Manufactured by Alliance Memory, Inc., this device features a 16M x 4 memory organization, providing a robust solution for embedded systems and other memory-intensive applications. The N25Q064A13EF640E operates with a clock frequency of 108 MHz, ensuring fast data access and transfer rates. It is designed to work within a supply voltage range of 2.7V to 3.6V, making it suitable for various power supply configurations.

The memory IC is packaged in an 8VDFPN surface-mount package, which is ideal for compact and space-constrained designs. The device is compliant with RoHS3 standards, ensuring environmental sustainability and regulatory compliance. Additionally, the N25Q064A13EF640E is REACH unaffected, further enhancing its suitability for global markets. The moisture sensitivity level (MSL) is rated at 3 (168 hours), making it suitable for standard manufacturing processes.

N25Q064A13EF640E Features

  • Memory Size and Organization: The N25Q064A13EF640E offers a 64Mbit memory size with a 16M x 4 organization, providing ample storage capacity for complex data storage needs.
  • High-Speed Performance: With a clock frequency of 108 MHz, this Flash memory IC ensures rapid data access and transfer, making it ideal for applications requiring high-speed performance.
  • SPI Memory Interface: The device features a standard SPI memory interface, facilitating easy integration with various microcontrollers and systems.
  • Low Power Consumption: Operating within a voltage range of 2.7V to 3.6V, the N25Q064A13EF640E is designed to minimize power consumption, making it suitable for battery-powered and low-power applications.
  • Write Cycle Time: The write cycle time for word and page operations is 5ms, ensuring efficient data writing capabilities.
  • Regulatory Compliance: The N25Q064A13EF640E is RoHS3 compliant and REACH unaffected, ensuring it meets stringent environmental and regulatory standards.
  • Moisture Sensitivity Level: Rated at MSL 3 (168 hours), the device is suitable for standard manufacturing processes without requiring special handling.

N25Q064A13EF640E Applications

The N25Q064A13EF640E is ideal for a variety of applications, including:

  • Embedded Systems: The high-speed performance and compact package make it suitable for embedded systems requiring reliable and efficient data storage.
  • Consumer Electronics: The low power consumption and regulatory compliance make it an excellent choice for consumer electronics, where environmental sustainability is a key consideration.
  • Industrial Applications: The robust design and high-speed performance ensure it can withstand the demands of industrial environments, providing reliable data storage solutions.
  • Telecommunications: The device's high-speed capabilities and compact form factor make it ideal for telecommunications applications, where space and performance are critical.

Conclusion of N25Q064A13EF640E

The N25Q064A13EF640E from Alliance Memory, Inc. stands out as a reliable and high-performance Flash memory IC, offering a 64Mbit memory size with a 16M x 4 organization and a clock frequency of 108 MHz. Its low power consumption, regulatory compliance, and robust design make it an ideal choice for a wide range of applications, from embedded systems to industrial environments. The device's compact 8VDFPN surface-mount package and fast write cycle time further enhance its suitability for modern, space-constrained designs. Overall, the N25Q064A13EF640E provides a comprehensive solution for reliable and efficient data storage, making it a standout choice in the memory IC market.

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