Alpha and Omega Semiconductor, Inc._AONS66612
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Alpha and Omega Semiconductor, Inc.
AONS66612

278-AONS66612
PDF Datasheet
MOSFET N-CH 60V 46A/100A 8DFN
16 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Product Status
Active
Supplier Device Package
8-DFN (5x6)
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
6.2W (Ta), 208W (Tc)
Package / Case
8-PowerSMD, Flat Leads
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AONS66612 Description

AONS66612 Description

The AONS66612 is a high-performance N-Channel MOSFET from Alpha & Omega Semiconductor Inc., designed for applications requiring high efficiency and reliability. With a drain-to-source voltage of 60V and a continuous drain current of 46A at 25°C (Ta) and 100A (Tc), this device is ideal for power electronics and motor control applications. The AONS66612 features a low Rds(on) of 1.65mOhm at 20A and 10V, ensuring minimal power loss and high efficiency in switching applications.

AONS66612 Features

  • Low Rds(on): The AONS66612 boasts a low Rds(on) of 1.65mOhm at 20A and 10V, reducing power loss and improving efficiency in switching applications.
  • High Drain Current: With a continuous drain current of 46A at 25°C (Ta) and 100A (Tc), this MOSFET can handle high current loads, making it suitable for power electronics and motor control applications.
  • High Drain-to-Source Voltage: The AONS66612 can withstand a drain-to-source voltage of up to 60V, making it suitable for high-voltage applications.
  • Low Gate Charge: The device has a low gate charge of 110nC at 10V, reducing switching losses and improving overall efficiency.
  • Surface Mount Technology: The AONS66612 is available in a surface-mount package, allowing for compact and efficient PCB layouts.
  • RoHS3 Compliance: This MOSFET is compliant with RoHS3 regulations, ensuring environmental friendliness and adherence to industry standards.

AONS66612 Applications

The AONS66612 is ideal for a variety of applications, including:

  1. Power Electronics: Due to its high drain current and low Rds(on), the AONS66612 is well-suited for power electronics applications, such as power supplies and converters.
  2. Motor Control: The device's high drain current and low Rds(on) make it an excellent choice for motor control applications, where high efficiency and reliability are critical.
  3. Industrial Automation: The AONS66612's high drain current and low Rds(on) make it suitable for industrial automation applications, such as robotic arms and conveyor systems.
  4. Automotive Electronics: This MOSFET can be used in automotive electronics, such as electric power steering and battery management systems, where high efficiency and reliability are essential.

Conclusion of AONS66612

The AONS66612 is a high-performance N-Channel MOSFET from Alpha & Omega Semiconductor Inc., offering a combination of high drain current, low Rds(on), and high drain-to-source voltage. Its unique features, such as low gate charge and RoHS3 compliance, make it an ideal choice for power electronics, motor control, industrial automation, and automotive electronics applications. With its advanced technology and performance benefits, the AONS66612 stands out as a reliable and efficient solution for demanding applications in the electronics industry.

FAQ

What operating temperature range does AONS66612 support?
AONS66612 has an operating temperature range of -55°C ~ 150°C (TJ).
What is AONS66612?
What voltage specification is listed for AONS66612?
What package or case is AONS66612 available in?
What is the mounting type of AONS66612?
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