Alpha and Omega Semiconductor, Inc. Tariff Inquiry

AOTF8N80

AOTF8N80 Description

The AOTF8N80 is a high-performance N-Channel MOSFET designed and manufactured by Alpha & Omega Semiconductor Inc. This device is part of the Single FETs, MOSFETs category and is offered in a TO220-3F package. With a drain-to-source voltage (Vdss) of 800V, it is suitable for high-voltage applications. The AOTF8N80 is not recommended for new designs, but it can still be a reliable choice for existing systems. It is compliant with the RoHS3 standard and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time.

AOTF8N80 Features

• High Drain-to-Source Voltage (Vdss): 800V, making it suitable for high-voltage applications.
• Low Rds On (Max): 1.63 Ohm @ 4A, 10V, ensuring efficient power dissipation.
• High Current - Continuous Drain (Id): 7.4A at 25°C, providing robust current handling capabilities.
• Low Gate Charge (Qg): 32 nC @ 10V, reducing switching losses and improving efficiency.
• Wide Vgs (Max) Range: ±30V, allowing for flexible gate drive voltages.
• Low Vgs(th) (Max): 4.5V @ 250µA, enabling easy threshold voltage control.
• Power Dissipation (Max): 50W (Tc), ensuring reliable operation under various thermal conditions.
• Mounting Type: Through Hole, providing a secure and stable connection in the circuit.
• Package: Tube, offering protection and ease of handling during assembly.

AOTF8N80 Applications

The AOTF8N80 is ideal for applications requiring high voltage and current handling capabilities. Some specific use cases include:

1. Power Electronics: Due to its high Vdss and Id ratings, the AOTF8N80 is well-suited for power electronics applications, such as power supplies and converters.
2. Industrial Control Systems: The device's robust performance makes it suitable for industrial control systems, where high voltage and current handling are essential.
3. Automotive Electronics: The AOTF8N80 can be used in automotive electronics, such as electric vehicle chargers and power management systems
4. RF Power Amplifiers: The device's low gate charge and high Vdss make it an excellent choice for RF power amplifiers in communication systems.

Conclusion of AOTF8N80

The AOTF8N80 is a high-voltage, high-current N-Channel MOSFET that offers excellent performance in various applications. Although it is not recommended for new designs, its robust specifications and compliance with industry standards make it a reliable choice for existing systems. With its unique features and advantages, the AOTF8N80 is an ideal solution for power electronics, industrial control systems, automotive electronics, and RF power amplifiers.