Ampleon_BLP10H603Z
original

Ampleon
BLP10H603Z

285-BLP10H603Z
PDF Datasheet
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 5 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Number of Terminals
12
Terminal Position
DUAL
JEDEC Package Code
MO-229
Number of Elements
1
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False

BLP10H603Z Description

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 5 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12

FAQ

What is BLP10H603Z?
BLP10H603Z is a RF FETs, MOSFETs from Ampleon. This product page provides its main specifications, pricing information, availability, and inquiry options.
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