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SFH309FA-4/5
544-SFH309FA-4/5
PDF Datasheet
Phototransistor IR Chip Silicon 900nm 2-Pin T-1
12 weeks
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
165
SFH309FA-4/5 Description
Phototransistor IR Chip Silicon 900nm 2-Pin T-1
FAQ
What package or case is SFH309FA-4/5 available in?
SFH309FA-4/5 is available in the T-1 package / case.
What is the mounting type of SFH309FA-4/5?
What operating temperature range does SFH309FA-4/5 support?
What is the standard lead time for SFH309FA-4/5?
What is SFH309FA-4/5?
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