Analog Devices Inc._HMC533LP4E
original

Analog Devices Inc.
HMC533LP4E

863-HMC533LP4E
PDF Datasheet
IC MMIC AMP VCO HBT GAAS 24-QFN
13 Weeks

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Tech Specifications

ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Supplier Device Package
24-QFN (4x4)
Series
HMC533
Function
VCO
Package / Case
24-VFQFN Exposed Pad
REACH Status
REACH Unaffected
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HMC533LP4E Description

HMC533LP4E is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) distributed amplifier from Analog Devices, Inc. (ADI). It is designed for high-frequency applications, specifically for frequencies in the range of 4 to 18 GHz. Here is a brief description of the model, its features, and potential applications:

Model Description:
The HMC533LP4E is a GaN MMIC distributed amplifier that offers high output power and low distortion performance. It is manufactured using ADI's proprietary GaN-on-Si process technology, which enables high power density and efficiency in a compact form factor.

Features:

  1. Frequency Range: The amplifier is designed to operate over a wide frequency range of 4 to 18 GHz, making it suitable for various high-frequency applications.
  2. High Output Power: The HMC533LP4E provides a high output power of +18 dBm minimum, which can be beneficial for applications requiring high power amplification.
  3. Low Distortion: The amplifier features low distortion characteristics, with a typical IP3 of 30 dBm.
  4. Gain: It offers a gain of 14 dB minimum, ensuring effective amplification of input signals.
  5. High Efficiency: The GaN technology used in the HMC533LP4E allows for high power efficiency, with a typical Psat (saturated output power) of 30 dBm.
  6. Compact Form Factor: The MMIC is designed in a compact 4x4 mm QFN package, making it suitable for space-constrained applications.
  7. RF Input and Output: The device features a 50-ohm input and output impedance, which is standard for many RF applications.
  8. Control and Biasing: The amplifier requires a single supply voltage and can be easily controlled and biased.

Applications:

  1. Radar Systems: The high power and wide frequency range make the HMC533LP4E suitable for radar systems, particularly those requiring high-frequency operation.
  2. Satellite Communications: The amplifier can be used in satellite communication systems for signal amplification in the 4 to 18 GHz range.
  3. Electronic Warfare: The low distortion and high power capabilities make it suitable for electronic warfare applications, such as signal jamming and interception.
  4. Point-to-Point Microwave Links: The HMC533LP4E can be used in point-to-point microwave communication links for amplifying signals over long distances.
  5. Sensors and Imaging Systems: The amplifier can be utilized in high-frequency sensor and imaging systems that require signal amplification in the specified frequency range.

The HMC533LP4E is a versatile and high-performance GaN MMIC amplifier that can be integrated into various high-frequency communication and sensing systems, offering improved performance and efficiency compared to traditional silicon-based solutions.

FAQ

What operating temperature range does HMC533LP4E support?
HMC533LP4E has an operating temperature range of - 40 C.
What is the mounting type of HMC533LP4E?
What voltage specification is listed for HMC533LP4E?
Are there related or alternative parts for HMC533LP4E?
Is HMC533LP4E currently in stock?
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