Analog Devices Inc./Maxim Integrated

DS1245AB-120+

DS1245AB-120+ Description

The DS1245AB-120+ is a high-performance 1Mbit Non-Volatile SRAM (NVSRAM) from Analog Devices Inc./Maxim Integrated, designed for applications requiring reliable data retention without backup power. Organized as 128K x 8, it features a parallel memory interface with an access time of 120 ns and operates within a 4.75V to 5.25V supply range. Housed in a 32-pin EDIP (Tube) package, this through-hole-mount device is RoHS3 compliant and rated for 0°C to 70°C industrial temperatures. Its NVSRAM architecture combines SRAM speed with non-volatile data storage, eliminating the need for external batteries or supercapacitors.

DS1245AB-120+ Features

• Non-Volatile Storage: Integrates SRAM with EEPROM for instant data backup during power loss.
• High-Speed Performance: 120 ns access/write cycle time ensures rapid read/write operations.
• Wide Voltage Range: Operates at 4.75V–5.25V, compatible with standard 5V systems.
• Industrial Reliability: REACH unaffected and MSL 1 (Unlimited) for robust handling.
• Parallel Interface: Simplifies integration with legacy systems requiring parallel memory.
• ECCN 3A991B2A: Suitable for export-controlled applications.

DS1245AB-120+ Applications

• Industrial Control Systems: Critical for real-time data logging and fault recovery.
• Medical Equipment: Ensures uninterrupted storage of patient data during power outages.
• Automotive Electronics: Used in black boxes and diagnostic tools requiring non-volatile memory.
• Telecommunications: Buffers configuration data in base stations and routers.
• Military/Aerospace: Reliable for harsh environments due to its wide temperature range.

Conclusion of DS1245AB-120+

The DS1245AB-120+ stands out for its battery-free NVSRAM technology, combining SRAM speed with non-volatile reliability. Its 120 ns performance, industrial-grade durability, and compliance with RoHS3/ECCN make it ideal for mission-critical systems. A superior alternative to battery-backed SRAM or standalone EEPROM, it reduces design complexity while ensuring data integrity in power-sensitive applications.