


Broadcom
4N35-W00E
903-4N35-W00E
PDF Datasheet
Transistor Optocoupler, 3.55kV Isolation, DIP, 1-Ch, 60mA IF
20 Weeks
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Responsible qualityTech Specifications
Package/Case
DIP
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
300mV
Contact Plating
Tin, Matte
Fall Time
10000ns
Forward Current
60mA
Input Current
10mA
4N35-W00E Description
Optoisolator Transistor with Base Output 3550Vrms 1 Channel 6-DIP
FAQ
What voltage specification is listed for 4N35-W00E?
The listed voltage-related specification for 4N35-W00E is 300mV.
What operating temperature range does 4N35-W00E support?
What is the mounting type of 4N35-W00E?
What is the standard lead time for 4N35-W00E?
Is 4N35-W00E currently in stock?



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