Broadcom_ATF-521P8-TR2
original

Broadcom
ATF-521P8-TR2

285-ATF-521P8-TR2
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8

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ISO9001
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ISO14001
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Tech Specifications

Contact Plating
Tin, Matte
Continuous Drain Current (ID)
500mA
Drain to Source Voltage (Vdss)
7V
Frequency
2GHz
Gain
17dB
Gate to Source Voltage (Vgs)
1V
Lead Free
Lead Free
Max Operating Temperature
150°C
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ATF-521P8-TR2 Description

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8

FAQ

What is ATF-521P8-TR2?
ATF-521P8-TR2 is a RF FETs, MOSFETs from Broadcom. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does ATF-521P8-TR2 support?
What is the mounting type of ATF-521P8-TR2?
What voltage specification is listed for ATF-521P8-TR2?
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