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Broadcom
ATF-531P8-TR1
285-ATF-531P8-TR1
PDF Datasheet
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8
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Tech Specifications
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
300mA
Drain to Source Voltage (Vdss)
7V
Frequency
2GHz
Gain
20dB
Gate to Source Voltage (Vgs)
1V
Lead Free
Lead Free
Max Operating Temperature
150°C
ATF-531P8-TR1 Description
RF Mosfet 4 V 135 mA 2GHz 20dB 24.5dBm 8-LPCC (2x2)
FAQ
What voltage specification is listed for ATF-531P8-TR1?
The listed voltage-related specification for ATF-531P8-TR1 is 7V.
What is the mounting type of ATF-531P8-TR1?
What package or case is ATF-531P8-TR1 available in?
Are there related or alternative parts for ATF-531P8-TR1?
What operating temperature range does ATF-531P8-TR1 support?
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