BYTe Semiconductor

BY25Q80BSTJG(R)

BY25Q80BSTJG(R) Description

The BY25Q80BSTJG(R) is a high-performance 8 Mbit FLASH memory IC chip manufactured by BYTe Semiconductor. This device is designed to offer robust performance and reliability in various electronic applications. With a memory organization of 1M x 8, it provides a substantial storage capacity of 8 Mbit, making it suitable for applications requiring significant data storage. The chip operates within a supply voltage range of 2.7V to 3.6V, ensuring compatibility with a wide range of power supplies. It features a clock frequency of 108 MHz, enabling fast data processing and transfer rates. The access time of 7 ns ensures rapid data retrieval, while the write cycle time of 60µs for a word and 4ms for a page allows for efficient data writing operations. The BY25Q80BSTJG(R) is available in a surface mount package, specifically in tape & reel (TR) format, making it ideal for automated assembly processes. It is RoHS3 compliant and has a moisture sensitivity level (MSL) of 3 (168 hours), ensuring environmental safety and reliability in manufacturing environments.

BY25Q80BSTJG(R) Features

• High Clock Frequency: The 108 MHz clock frequency allows for high-speed data processing, making the BY25Q80BSTJG(R) suitable for applications requiring rapid data transfer and processing.
• Fast Access Time: With an access time of 7 ns, the BY25Q80BSTJG(R) ensures quick data retrieval, enhancing overall system performance.
• Efficient Write Cycle Time: The write cycle time of 60µs for a word and ms4 for a page allows for efficient data writing operations, reducing latency and improving system responsiveness.
• Wide Voltage Range: The supply voltage range of 2.7V to 3.6V provides flexibility and compatibility with various power supply configurations.
• Surface Mount Packaging: The surface mount package, specifically in tape & reel (TR) format, facilitates easy integration into automated assembly lines, reducing production costs and improving manufacturing efficiency.
• RoHS3 Compliance: The BY25Q80BSTJG(R) is RoHS3 compliant, ensuring environmental safety and adherence to industry standards for hazardous substances.
• Moisture Sensitivity Level: The MSL of 3 (168 hours) ensures reliability and durability in manufacturing environments, protecting the device from moisture-related damage.

BY25Q80BSTJG(R) Applications

The BY25Q80BSTJG(R) is ideal for a variety of applications where high-speed data storage and retrieval are critical. Some specific use cases include:

• Embedded Systems: The high-speed and efficient performance make it suitable for embedded systems requiring reliable and fast data storage.
• IoT Devices: The compact size and surface mount packaging make it ideal for Internet of Things (IoT) devices where space is limited and high performance is required.
• Consumer Electronics: The wide voltage range and RoHS3 compliance make it suitable for consumer electronics applications, ensuring compatibility and environmental safety.
• Industrial Automation: The robustness and reliability of the BY25Q80BSTJG(R) make it ideal for industrial automation applications where data integrity and system performance are paramount.

Conclusion of BY25Q80BSTJG(R)

The BY25Q80BSTJG(R) is a high-performance 8 Mbit FLASH memory IC chip that offers a combination of speed, efficiency, and reliability. Its unique features, such as the high clock frequency, fast access time, and efficient write cycle time, make it stand out from similar models. The wide voltage range, surface mount packaging, and RoHS3 compliance ensure compatibility, ease of integration, and environmental safety. The BY25Q80BSTJG(R) is ideal for a range of applications, including embedded systems, IoT devices, consumer electronics, and industrial automation. Its robust performance and reliability make it a reliable choice for engineers and designers looking for a high-quality memory solution.