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Central Semiconductor
BDV64B
276-BDV64B
PDF Datasheet
Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
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Tech Specifications
Package/Case
TO-218-3
Collector Emitter Breakdown Voltage
100V
Max Collector Current
12A
Max Power Dissipation
125W
Mount
Through Hole
Packaging
Bulk
RoHS Compliant
No
Transition Frequency
60MHz
BDV64B Description
Bipolar (BJT) Transistor PNP 100 V 12 A 60MHz 125 W Through Hole TO-218
FAQ
What is the mounting type of BDV64B?
BDV64B uses a Through Hole mounting style based on the listed product specifications.
What package or case is BDV64B available in?
What is BDV64B?
What voltage specification is listed for BDV64B?
Is BDV64B currently in stock?
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