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Central Semiconductor
BDV65
276-BDV65
PDF Datasheet
POWER TRANSISTOR NPN TO218
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Tech Specifications
Package/Case
TO-218-3
Collector Emitter Breakdown Voltage
60V
Max Collector Current
12A
Max Power Dissipation
125W
Mount
Through Hole
Packaging
Bulk
RoHS Compliant
No
Transition Frequency
60MHz
BDV65 Description
Bipolar (BJT) Transistor NPN 60 V 12 A 60MHz 125 W Through Hole TO-218
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