Central Semiconductor_BDV65A
Central Semiconductor_BDV65A
original

Central Semiconductor
BDV65A

276-BDV65A
PDF Datasheet
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
TO-218-3
Collector Emitter Breakdown Voltage
80V
Max Collector Current
12A
Max Power Dissipation
125W
Mount
Through Hole
Packaging
Bulk
RoHS Compliant
No
Transition Frequency
60MHz
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BDV65A Description

Bipolar (BJT) Transistor NPN 80 V 12 A 60MHz 125 W Through Hole TO-218

FAQ

What is the mounting type of BDV65A?
BDV65A uses a Through Hole mounting style based on the listed product specifications.
What is BDV65A?
What voltage specification is listed for BDV65A?
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