Central Semiconductor_BDV65B
Central Semiconductor_BDV65B
original

Central Semiconductor
BDV65B

276-BDV65B
PDF Datasheet
Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original
D&B

Tech Specifications

Package/Case
TO-218-3
Collector Emitter Breakdown Voltage
100V
Max Collector Current
12A
Max Power Dissipation
125W
Mount
Through Hole
Packaging
Bulk
RoHS Compliant
No
Transition Frequency
60MHz
Show More

BDV65B Description

Bipolar (BJT) Transistor NPN 100 V 12 A 60MHz 125 W Through Hole TO-218

FAQ

What voltage specification is listed for BDV65B?
The listed voltage-related specification for BDV65B is 100V.
What is BDV65B?
Is BDV65B currently in stock?
Are there related or alternative parts for BDV65B?
What package or case is BDV65B available in?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ