Diodes Incorporated_2DD1766R-13
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Diodes Incorporated
2DD1766R-13

276-2DD1766R-13
TRANS NPN 32V 2A SOT89-3

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
Frequency - Transition
220MHz
Current - Collector (Ic) (Max)
2 A
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
32 V
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2DD1766R-13 Description

2DD1766R-13 Description

The 2DD1766R-13 is a high-performance NPN transistor from Diodes Incorporated, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 32V and a maximum collector current of 2A, this device offers excellent performance in power amplification and switching applications. The 2DD1766R-13 features a surface-mount packaging, making it ideal for use in compact and space-constrained designs.

2DD1766R-13 Features

  • Frequency - Transition: 220MHz, ensuring reliable operation in high-speed switching applications.
  • Current - Collector (Ic) (Max): 2A, providing ample current handling capability for power amplification.
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A, offering low saturation voltage for efficient power management.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V, ensuring consistent performance across various operating conditions.
  • Mounting Type: Surface Mount, facilitating integration into compact and space-constrained designs.
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations and ensuring eco-friendly operation.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), providing robust protection against moisture-induced degradation.

2DD1766R-13 Applications

The 2DD1766R-13 is ideal for a variety of applications in the electronics industry, including:

  1. Power Amplification: Due to its high current handling capability and low saturation voltage, the 2DD1766R-13 is well-suited for use in power amplifiers, where efficient power management and high performance are critical.
  2. Switching Applications: The device's high transition frequency and low saturation voltage make it an excellent choice for high-speed switching applications, such as in motor control and power management systems.
  3. Compact Designs: The surface-mount packaging of the 2DD1766R-13 allows for easy integration into compact and space-constrained designs, making it ideal for use in portable electronic devices and consumer electronics.

Conclusion of 2DD1766R-13

The 2DD1766R-13 is a versatile and high-performance NPN transistor from Diodes Incorporated, offering a combination of excellent electrical characteristics and compact packaging. Its unique features, such as high transition frequency, low saturation voltage, and surface-mount packaging, make it an ideal choice for a wide range of applications in the electronics industry, including power amplification, switching, and compact designs. Despite its obsolescence, the 2DD1766R-13 remains a reliable and efficient solution for demanding applications where performance and space are critical.

FAQ

What voltage specification is listed for 2DD1766R-13?
The listed voltage-related specification for 2DD1766R-13 is 32 V.
What package or case is 2DD1766R-13 available in?
What is the mounting type of 2DD1766R-13?
Are there related or alternative parts for 2DD1766R-13?
What operating temperature range does 2DD1766R-13 support?
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