Diodes Incorporated_BC857BS-7-F
original

Diodes Incorporated
BC857BS-7-F

277-BC857BS-7-F
PDF Datasheet
TRANS 2PNP 45V 0.1A SOT363
8 Weeks

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Tech Specifications

Configuration
Dual
PPAP
No
Maximum Base Emitter Saturation Voltage (V)
0.7(Typ)@0.5mA@10mA
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
45V
Automotive
No
Supplier Package
SOT-363
Transistor Type
2 PNP (Dual)
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BC857BS-7-F Description

BC857BS-7-F Description

The BC857BS-7-F is a high-performance, dual PNP bipolar transistor array designed and manufactured by Diodes Incorporated. This Surface Mount device offers a range of technical specifications that make it suitable for various applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, the BC857BS-7-F delivers reliable performance in demanding environments.

BC857BS-7-F Features

  • Technical Specifications:

    • Frequency - Transition: 100MHz
    • Current - Collector (Ic) (Max): 100mA
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • Power - Max: 200mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • High transition frequency of 100MHz for fast switching applications
    • Low Vce saturation voltage for improved efficiency in low-voltage circuits
    • Robust collector-emitter breakdown voltage of 45V for reliable operation in high-voltage environments
    • Low collector cutoff current for minimal leakage in off-state applications
  • Unique Advantages:

    • Surface Mount packaging for compact and efficient PCB layout
    • Active product status for ongoing availability and support
    • REACH Unaffected and ROHS3 Compliant for environmental and regulatory compliance

BC857BS-7-F Applications

The BC857BS-7-F is ideal for a variety of applications in the electronics industry, including:

  1. Low-voltage switching circuits: The low Vce saturation voltage and high transition frequency make it suitable for efficient switching in low-voltage applications.
  2. High-voltage amplification: The robust collector-emitter breakdown voltage of 45V allows for reliable amplification in high-voltage environments.
  3. Signal processing: The dual PNP configuration enables complex signal processing applications, such as mixers and modulators.
  4. Automotive electronics: The high transition frequency and low leakage current make it suitable for automotive electronics, such as ignition systems and sensor interfaces.

Conclusion of BC857BS-7-F

The BC857BS-7-F from Diodes Incorporated is a versatile and high-performance dual PNP bipolar transistor array that offers a range of technical specifications and performance benefits. Its unique features, such as high transition frequency, low Vce saturation voltage, and robust collector-emitter breakdown voltage, make it an ideal choice for various applications in the electronics industry. With its ongoing product status, REACH Unaffected and ROHS3 Compliant certifications, the BC857BS-7-F is a reliable and environmentally friendly solution for demanding electronic designs.

FAQ

What is the mounting type of BC857BS-7-F?
BC857BS-7-F uses a Surface Mount mounting style based on the listed product specifications.
What voltage specification is listed for BC857BS-7-F?
What operating temperature range does BC857BS-7-F support?
What is BC857BS-7-F?
Does BC857BS-7-F have quantity-based pricing?
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