Diodes Incorporated_DGD2104AS8-13
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Diodes Incorporated
DGD2104AS8-13

730-DGD2104AS8-13
PDF Datasheet
IC GATE DRVR HALF-BRIDGE 8SO
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Tech Specifications

Rise / Fall Time (Typ)
100ns, 50ns
Gate Type
IGBT, N-Channel MOSFET
Product Status
Obsolete
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Voltage - Supply
10V ~ 20V
REACH Status
REACH Unaffected
Mfr
Diodes Incorporated
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DGD2104AS8-13 Description

DGD2104AS8-13 Description

The DGD2104AS8-13 is a half-bridge gate driver IC designed for high-performance power management applications. Manufactured by Diodes Incorporated, this device is part of the DGD2104 family and is optimized for driving power MOSFETs in various switching applications. It features a synchronous channel type and supports a wide supply voltage range of 10V to 20V, making it suitable for diverse power management needs. The DGD2104AS8-13 is packaged in a surface-mount 8SO package, ensuring compact and reliable integration into modern electronic designs.

DGD2104AS8-13 Features

  • Wide Supply Voltage Range: The DGD2104AS8-13 operates within a supply voltage range of 10V to 20V, providing flexibility for various power supply configurations.
  • High Side Voltage Capability: With a maximum high side voltage (bootstrap) of 600V, this IC is ideal for high-voltage applications, ensuring robust performance in demanding environments.
  • Dual Drivers: The device includes two drivers, each capable of delivering peak output currents of 210mA (source) and 360mA (sink), enabling efficient control of power MOSFETs.
  • Fast Rise and Fall Times: Typical rise and fall times of 100ns and 50ns respectively ensure rapid switching, minimizing switching losses and improving overall efficiency.
  • Logic Compatibility: The logic voltage levels (VIL, VIH) of 0.8V and 2.5V make it compatible with a wide range of digital control circuits.
  • Compliance and Reliability: The DGD2104AS8-13 is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards. It also features a moisture sensitivity level (MSL) of 3, ensuring reliability in various manufacturing processes.
  • Packaging: Available in a tape and reel (TR) package, it is suitable for automated surface-mount assembly processes, enhancing manufacturing efficiency.

DGD2104AS8-13 Applications

The DGD2104AS8-13 is well-suited for a variety of applications requiring efficient power management and high-voltage switching. Key applications include:

  • DC-DC Converters: Ideal for driving power MOSFETs in high-efficiency DC-DC converters, providing reliable gate drive signals and ensuring minimal switching losses.
  • Motor Control: Suitable for driving MOSFETs in motor control applications, where fast switching and high voltage capability are essential for precise control and high performance.
  • Power Supplies: Can be used in various power supply designs, including those requiring high-voltage isolation and efficient power transfer.
  • Renewable Energy Systems: Applicable in solar inverters and other renewable energy systems where high-voltage switching and reliable gate drive are critical.

Conclusion of DGD2104AS8-13

The DGD2104AS8-13 gate driver IC from Diodes Incorporated offers a robust solution for high-voltage power management applications. Its wide supply voltage range, high side voltage capability, and fast switching characteristics make it an ideal choice for demanding environments. The dual drivers and compatibility with various digital control circuits further enhance its versatility. While the product status is marked as obsolete, the DGD2104AS8-13 remains a reliable option for existing designs and specific applications where its unique features provide significant advantages.

FAQ

What operating temperature range does DGD2104AS8-13 support?
DGD2104AS8-13 has an operating temperature range of -40°C ~ 150°C (TJ).
What is DGD2104AS8-13?
What is the standard lead time for DGD2104AS8-13?
What package or case is DGD2104AS8-13 available in?
What is the mounting type of DGD2104AS8-13?
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