Diodes Incorporated_DGD2104S8-13
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Diodes Incorporated
DGD2104S8-13

730-DGD2104S8-13
PDF Datasheet
IC GATE DRVR HALF-BRIDGE 8SO
0 weeks

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Tech Specifications

Rise / Fall Time (Typ)
70ns, 35ns
Gate Type
IGBT, N-Channel MOSFET
Product Status
Obsolete
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Voltage - Supply
10V ~ 20V
REACH Status
REACH Unaffected
Mfr
Diodes Incorporated
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DGD2104S8-13 Description

DGD2104S8-13 Description

The DGD2104S8-13 is a high-performance half-bridge gate driver IC designed by Diodes Incorporated. This obsolete product is ideal for applications requiring robust and efficient power management solutions. It features a synchronous channel type and operates within a supply voltage range of 10V to 20V, making it suitable for a variety of power electronic circuits. The DGD2104S8-13 is housed in an 8SO package and is available in a surface mount configuration, which is ideal for compact and high-density PCB designs.

DGD2104S8-13 Features

  • Supply Voltage Range: The DGD2104S8-13 operates within a wide supply voltage range of 10V to 20V, providing flexibility in power supply design.
  • High Side Voltage: With a maximum high side voltage of 600V (bootstrap), this IC is capable of driving high-voltage MOSFETs and IGBTs, making it suitable for high-power applications.
  • Rise and Fall Time: The typical rise and fall times of 70ns and 35ns respectively ensure fast and efficient switching, minimizing switching losses and improving overall system performance.
  • Output Current: The peak output current capabilities of 290mA (source) and 600mA (sink) provide robust power handling, ensuring reliable operation under various load conditions.
  • Logic Voltage Levels: The logic voltage levels of VIL = 0.8V and VIH = 2.5V ensure compatibility with a wide range of digital control circuits.
  • Compliance and Safety: The DGD2104S8-13 is REACH unaffected and RoHS3 compliant, ensuring it meets the stringent environmental and safety standards required in the electronics industry.
  • Moisture Sensitivity Level: The MSL level 3 (168 hours) indicates that the IC is suitable for use in environments with moderate moisture exposure, making it ideal for industrial and automotive applications.

DGD2104S8-13 Applications

The DGD2104S8-13 is well-suited for a variety of applications where efficient power management and high-voltage switching are required. Some specific use cases include:

  • Power Supplies: Ideal for driving MOSFETs and IGBTs in high-voltage power supplies, ensuring efficient power conversion and minimal energy loss.
  • Motor Control: Suitable for driving high-voltage motors, providing precise control and efficient power delivery.
  • Inverters: Can be used in solar inverters and other power conversion systems, where high-voltage switching and efficient power management are critical.
  • Automotive Electronics: Given its moisture sensitivity level and robust performance, the DGD2104S8-13 is suitable for automotive applications where reliability and durability are paramount.

Conclusion of DGD2104S8-13

The DGD2104S8-13 gate driver IC from Diodes Incorporated offers a comprehensive set of features that make it a reliable and efficient choice for high-voltage power management applications. Its wide supply voltage range, high side voltage capability, and fast switching times ensure it can handle demanding power electronic tasks. While it is an obsolete product, its robust performance and compliance with industry standards make it a valuable component for legacy systems and specific applications where its unique features are required. For engineers and designers looking for a reliable and efficient gate driver solution, the DGD2104S8-13 remains a viable option.

FAQ

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