Diodes Incorporated_DMG1012T-7
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Diodes Incorporated
DMG1012T-7

278-DMG1012T-7
PDF Datasheet
MOSFET N-CH 20V 630MA SOT-523
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
26.7
Input Capacitance (Ciss) (Max) @ Vds
60.67 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V
Typical Rise Time (ns)
7.4
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
5.1
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DMG1012T-7 Description

DMG1012T-7 Description

The DMG1012T-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for applications requiring robust power management and efficient switching. This MOSFET is built on advanced metal oxide technology, ensuring superior performance and reliability. With a maximum drain-source voltage of 20V and a continuous drain current of 630mA at 25°C, the DMG1012T-7 is well-suited for a variety of electronic devices.

DMG1012T-7 Features

  • Input Capacitance (Ciss): The DMG1012T-7 boasts a maximum input capacitance of 60.67 pF at 16V, ensuring fast switching and minimal signal distortion.
  • Gate Charge (Qg): With a maximum gate charge of 0.74 nC at 4.5V, this MOSFET offers efficient gate drive and reduced power consumption.
  • Low Rds On: The maximum Rds On of 400mOhm at 600mA and 4.5V ensures low conduction losses and high efficiency.
  • Robust Voltage Tolerance: The DMG1012T-7 can handle a maximum gate-source voltage (Vgs) of ±6V, providing flexibility in various circuit designs.
  • Environmental Compliance: This MOSFET is REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious applications.
  • Moisture Sensitivity Level (MSL): With an MSL of 1, the DMG1012T-7 is suitable for unlimited storage, reducing concerns about moisture-induced damage.

DMG1012T-7 Applications

The DMG1012T-7 is ideal for applications where high efficiency, low power consumption, and robust performance are critical. Some specific use cases include:

  • Power Management: In battery-powered devices, the DMG1012T-7's low Rds On and high efficiency help extend battery life.
  • Automotive Electronics: The DMG1012T-7's ability to handle high voltages and currents makes it suitable for automotive applications, such as power windows and lighting systems.
  • Industrial Control Systems: In industrial settings, the DMG1012T-7's robust performance and high voltage tolerance ensure reliable operation in demanding environments.

Conclusion of DMG1012T-7

The DMG1012T-7 from Diodes Incorporated is a versatile and high-performing N-Channel MOSFET. Its unique combination of low Rds On, high voltage tolerance, and environmental compliance make it an excellent choice for a wide range of applications, from power management in consumer electronics to demanding industrial and automotive systems. With its advanced metal oxide technology and robust performance, the DMG1012T-7 stands out as a reliable and efficient solution in the world of MOSFETs.

FAQ

What is DMG1012T-7?
DMG1012T-7 is a Single FETs, MOSFETs from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 348496 )
Quantity Unit Price Ext. Price
200+ $0.03308 $6.62
600+ $0.02803 $16.82
3000+ $0.02500 $75.00
9000+ $0.02237 $201.33
21000+ $0.02095 $439.95
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