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DMG1012T-7
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DMG1012T-7 Description
DMG1012T-7 Description
The DMG1012T-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for applications requiring robust power management and efficient switching. This MOSFET is built on advanced metal oxide technology, ensuring superior performance and reliability. With a maximum drain-source voltage of 20V and a continuous drain current of 630mA at 25°C, the DMG1012T-7 is well-suited for a variety of electronic devices.
DMG1012T-7 Features
- Input Capacitance (Ciss): The DMG1012T-7 boasts a maximum input capacitance of 60.67 pF at 16V, ensuring fast switching and minimal signal distortion.
- Gate Charge (Qg): With a maximum gate charge of 0.74 nC at 4.5V, this MOSFET offers efficient gate drive and reduced power consumption.
- Low Rds On: The maximum Rds On of 400mOhm at 600mA and 4.5V ensures low conduction losses and high efficiency.
- Robust Voltage Tolerance: The DMG1012T-7 can handle a maximum gate-source voltage (Vgs) of ±6V, providing flexibility in various circuit designs.
- Environmental Compliance: This MOSFET is REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious applications.
- Moisture Sensitivity Level (MSL): With an MSL of 1, the DMG1012T-7 is suitable for unlimited storage, reducing concerns about moisture-induced damage.
DMG1012T-7 Applications
The DMG1012T-7 is ideal for applications where high efficiency, low power consumption, and robust performance are critical. Some specific use cases include:
- Power Management: In battery-powered devices, the DMG1012T-7's low Rds On and high efficiency help extend battery life.
- Automotive Electronics: The DMG1012T-7's ability to handle high voltages and currents makes it suitable for automotive applications, such as power windows and lighting systems.
- Industrial Control Systems: In industrial settings, the DMG1012T-7's robust performance and high voltage tolerance ensure reliable operation in demanding environments.
Conclusion of DMG1012T-7
The DMG1012T-7 from Diodes Incorporated is a versatile and high-performing N-Channel MOSFET. Its unique combination of low Rds On, high voltage tolerance, and environmental compliance make it an excellent choice for a wide range of applications, from power management in consumer electronics to demanding industrial and automotive systems. With its advanced metal oxide technology and robust performance, the DMG1012T-7 stands out as a reliable and efficient solution in the world of MOSFETs.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 200+ | $0.03308 | $6.62 |
| 600+ | $0.02803 | $16.82 |
| 3000+ | $0.02500 | $75.00 |
| 9000+ | $0.02237 | $201.33 |
| 21000+ | $0.02095 | $439.95 |



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