Diodes Incorporated_DMG1016V-7
original

Diodes Incorporated
DMG1016V-7

289-DMG1016V-7
PDF Datasheet
MOSFET N/P-CH 20V 0.87A SOT563
8 Weeks

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Tech Specifications

Configuration
N and P-Channel
Typical Turn-Off Delay Time (ns)
26.7@N Channel|28.4@P Channel
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 16V
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V
Typical Rise Time (ns)
7.4@N Channel|8.1@P Channel
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
5.1
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DMG1016V-7 Description

DMG1016V-7 Description

The DMG1016V-7 is a high-performance MOSFET (Metal Oxide) device from Diodes Incorporated, designed for use in a variety of electronic applications. This N/P-CH 20V 0.87A SOT563 device offers exceptional performance and reliability, making it an ideal choice for engineers seeking a robust solution for their projects.

DMG1016V-7 Features

  • Logic Level Gate: The DMG1016V-7 features a logic level gate, enabling seamless integration with digital logic circuits.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 60.67pF @ 16V, this device minimizes capacitive loading and ensures fast switching performance.
  • Low Gate Charge: A maximum gate charge (Qg) of 0.74nC @ 4.5V reduces power consumption and enables efficient operation.
  • Surface Mount Technology: The DMG1016V-7 is designed for surface mount applications, providing a compact and reliable solution for space-constrained designs.
  • High Drain Current: Capable of handling continuous drain currents of up to 870mA @ 25°C, this device is well-suited for high-current applications.
  • Low Rds On: With a maximum Rds On of 400mOhm @ 600mA, 4.5V, the DMG1016V-7 offers low on-resistance for improved efficiency.
  • Robust Voltage Ratings: A drain-to-source voltage (Vdss) of 20V ensures reliable operation in high-voltage environments.

DMG1016V-7 Applications

The DMG1016V-7's unique combination of performance, reliability, and versatility makes it an ideal choice for a wide range of applications, including:

  • Power Management: Utilize the DMG1016V-7 in power management circuits to efficiently control and distribute power in electronic devices.
  • Automotive Electronics: Rely on this MOSFET for reliable operation in harsh automotive environments, where high currents and voltages are common.
  • Industrial Control Systems: Employ the DMG1016V-7 in industrial control systems to ensure precise control and monitoring of various processes.
  • Communications Equipment: Use this device in communication equipment to handle high-speed data transmission and signal processing.

Conclusion of DMG1016V-7

In conclusion, the DMG1016V-7 from Diodes Incorporated is a powerful MOSFET device that offers a unique combination of performance, reliability, and versatility. Its low input capacitance, low gate charge, and high drain current capabilities make it an ideal choice for a wide range of applications, from power management to automotive electronics. With its robust voltage ratings and surface mount technology, the DMG1016V-7 is a reliable and efficient solution for engineers seeking a high-performance MOSFET device.

FAQ

What is DMG1016V-7?
DMG1016V-7 is a FET, MOSFET Arrays from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 970 )
Quantity Unit Price Ext. Price
5+ $0.11777 $0.59
50+ $0.09424 $4.71
150+ $0.08248 $12.37
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