Diodes Incorporated_DMG2301U-7
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Diodes Incorporated
DMG2301U-7

278-DMG2301U-7
PDF Datasheet
MOSFET P-CH 20V 2.5A SOT23-3
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
46.5
Input Capacitance (Ciss) (Max) @ Vds
608 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 4.5 V
Typical Rise Time (ns)
10.3
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
12.5
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DMG2301U-7 Description

DMG2301U-7 Description

The DMG2301U-7 is a high-performance MOSFET P-CH 20V 2.5A SOT23-3 device from Diodes Incorporated. This single FET is designed for applications requiring low on-resistance, high input capacitance, and low gate charge. The DMG2301U-7 is manufactured using advanced MOSFET technology, ensuring excellent electrical performance and reliability.

DMG2301U-7 Features

  • Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 6 V - Low input capacitance for fast switching and reduced power consumption.
  • Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V - Low gate charge for efficient gate drive and reduced power dissipation.
  • Drain to Source Voltage (Vdss): 20 V - Suitable for applications requiring high voltage operation.
  • Power Dissipation (Max): 800mW (Ta) - Capable of handling high power dissipation in various applications.
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V - Low on-resistance for reduced power loss and increased efficiency.
  • Vgs(th) (Max) @ Id: 1V @ 250µA - Low threshold voltage for easy gate drive and reduced power consumption.
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) - Capable of handling high continuous drain current.
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V - Wide range of drive voltages for compatibility with various gate drivers.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for use in harsh environments with high humidity.
  • RoHS Status: ROHS3 Compliant - Environmentally friendly and compliant with RoHS regulations.

DMG2301U-7 Applications

The DMG2301U-7 is ideal for a wide range of applications, including:

  1. Power Management: Due to its low on-resistance and high voltage capability, the DMG2301U-7 is suitable for power management applications in various electronic devices.
  2. Motor Control: The low gate charge and high input capacitance make it an excellent choice for motor control applications, where fast switching and reduced power consumption are crucial.
  3. Automotive Electronics: The DMG2301U-7's ability to handle high power dissipation and its moisture sensitivity level make it suitable for automotive electronics, where reliability and performance are essential.
  4. Industrial Control: The DMG2301U-7's robust performance and wide range of drive voltages make it ideal for industrial control applications, where high voltage and power handling are required.

Conclusion of DMG2301U-7

The DMG2301U-7 is a versatile and high-performance MOSFET P-CH 20V 2.5A SOT23-3 device from Diodes Incorporated. Its unique combination of low on-resistance, high input capacitance, and low gate charge make it an excellent choice for a wide range of applications, including power management, motor control, automotive electronics, and industrial control. With its RoHS compliance and moisture sensitivity level, the DMG2301U-7 is an environmentally friendly and reliable solution for demanding electronic applications.

FAQ

What is DMG2301U-7?
DMG2301U-7 is a Single FETs, MOSFETs from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 3391 )
Quantity Unit Price Ext. Price
100+ $0.05748 $5.75
300+ $0.04499 $13.50
3000+ $0.04025 $120.75
6000+ $0.03676 $220.56
9000+ $0.03500 $315.00
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