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DMG4435SSS-13

DMG4435SSS-13 is a high-performance gallium nitride (GaN) transistor offered by Diodes Incorporated. It is designed for high-frequency and high-power applications, making it suitable for a wide range of uses.

Description:

The DMG4435SSS-13 is a normally-off enhancement mode HEMT (High Electron Mobility Transistor) that features a high breakdown voltage (Vds) of 100V and a low on-resistance (Rds(on)) of 380mΩ (max) at a gate-source voltage (Vgs) of 10V. It is available in a compact TO-263-5 package, making it suitable for space-constrained applications.

Features:

1. High breakdown voltage (Vds) of 100V
2. Low on-resistance (Rds(on)) of 380mΩ (max) at Vgs of 10V
3. High switching speed and low gate charge
4. High thermal conductivity and low thermal resistance
5. Suitable for high-frequency and high-power applications
6. Compact TO-263-5 package

Applications:

1. RF power amplifiers for wireless communication systems
2. High-power switching applications in industrial and automotive systems
3. Power conversion and energy management systems
4. Motor drives and control systems
5. Class D audio amplifiers
6. LED lighting applications

The DMG4435SSS-13 is a versatile and high-performance transistor that can be used in a variety of applications where high-frequency and high-power performance are required. Its compact package and low thermal resistance make it an ideal choice for space-constrained applications.