Diodes Incorporated_DMG4N60SJ3
original

Diodes Incorporated
DMG4N60SJ3

278-DMG4N60SJ3
PDF Datasheet
MOSFET N-CH 600V 3A TO251

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
532 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
14.3 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
TO-251
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
41W (Tc)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
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DMG4N60SJ3 Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the DMG4N60SJ3 belongs to can be classified under the Discrete Semiconductors. DMG4N60SJ3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. DMG4N60SJ3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Diodes Incorporated plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Diodes Incorporated is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Diodes Incorporated builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is the mounting type of DMG4N60SJ3?
DMG4N60SJ3 uses a Through Hole mounting style based on the listed product specifications.
Are there related or alternative parts for DMG4N60SJ3?
What voltage specification is listed for DMG4N60SJ3?
What is DMG4N60SJ3?
What operating temperature range does DMG4N60SJ3 support?
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