


Diodes Incorporated
DMG8880LSS-13
278-DMG8880LSS-13
PDF Datasheet
MOSFET N-CH 30V 11.6A 8SOP
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Responsible qualityTech Specifications
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1289 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
27.6 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
8-SO
Drain to Source Voltage (Vdss)
30 V
Power Dissipation-Max
1.43W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
DMG8880LSS-13 Description
Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the DMG8880LSS-13 belongs to can be classified under the Discrete Semiconductors. DMG8880LSS-13 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. DMG8880LSS-13 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Diodes Incorporated plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Diodes Incorporated is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Diodes Incorporated builds trust with consumers and enhances the overall reputation of their products.
FAQ
What voltage specification is listed for DMG8880LSS-13?
The listed voltage-related specification for DMG8880LSS-13 is 30 V.
Is DMG8880LSS-13 currently in stock?
What operating temperature range does DMG8880LSS-13 support?
What package or case is DMG8880LSS-13 available in?
What is DMG8880LSS-13?



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