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DML3009LDC-7

The DML3009LDC-7 is a high-power gallium nitride (GaN) transistor from Diodes Incorporated. It is designed for use in high-frequency, high-power applications, such as RF power amplifiers, Class E power amplifiers, and Class F power amplifiers.

Description:

The DML3009LDC-7 is a gallium nitride (GaN) on silicon (Si) transistor that operates at a frequency range of 30 MHz to 300 MHz. It is available in a 7-pin PowerFLAT 5 dual side package. The device features a high breakdown voltage of 250V and a low on-resistance of 85 milliohms maximum.

Features:

• High-frequency operation from 30 MHz to 300 MHz
• Gallium nitride (GaN) on silicon (Si) technology
• High breakdown voltage of 250V
• Low on-resistance of 85 milliohms maximum
• Available in a 7-pin PowerFLAT 5 dual side package
• Suitable for high-power applications

Applications:

• RF power amplifiers
• Class E power amplifiers
• Class F power amplifiers
• High-power switching applications
• High-frequency power conversion

The DML3009LDC-7 is a high-performance transistor that is well-suited for use in high-power, high-frequency applications. Its GaN on Si technology provides high breakdown voltage and low on-resistance, making it an excellent choice for power amplifiers and other high-power applications.