Diodes Incorporated_DMN1008UFDF-7
original

Diodes Incorporated
DMN1008UFDF-7

278-DMN1008UFDF-7
PDF Datasheet
MOSFET N-CH 12V 12.2A 6UDFN
8 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single Quad Drain
Typical Turn-Off Delay Time (ns)
17.5
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
995 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs
23.4 nC @ 8 V
Typical Rise Time (ns)
6.6
PPAP
No
Channel Mode
Enhancement
Show More

DMN1008UFDF-7 Description

DMN1008UFDF-7 Description

The DMN1008UFDF-7 is a high-performance MOSFET N-CH 12V 12.2A 6UDFN from Diodes Incorporated. This single FET is designed for automotive applications and offers exceptional performance in terms of power dissipation, gate charge, and input capacitance. With a maximum drain-to-source voltage of 12V and a continuous drain current of 12.2A at 25°C, the DMN1008UFDF-7 is ideal for demanding applications that require high power and efficiency.

DMN1008UFDF-7 Features

  • Technology: MOSFET (Metal Oxide) - Offers high input impedance and low power consumption.
  • Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V - Minimizes capacitive loading and improves high-frequency performance.
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V - Reduces switching losses and improves efficiency.
  • Drain to Source Voltage (Vdss): 12 V - Suitable for high-voltage applications.
  • Power Dissipation (Max): 700mW (Ta) - Ensures reliable operation in high-power applications.
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V - Provides low on-resistance for efficient power transfer.
  • Vgs(th) (Max) @ Id: 1V @ 250µA - Ensures low-voltage operation and compatibility with various gate drivers.
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) - Supports high-current applications.
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V - Offers flexibility in gate drive voltage requirements.

DMN1008UFDF-7 Applications

The DMN1008UFDF-7 is ideal for various automotive applications, including:

  • Power Management: Due to its high power dissipation and low on-resistance, the DMN1008UFDF-7 is suitable for power management systems in vehicles.
  • Motor Control: The high drain current and low on-resistance make it an excellent choice for motor control applications, such as electric power steering and window control systems.
  • LED Lighting: The DMN1008UFDF-7 can be used in LED lighting systems for vehicles, providing efficient power management and control.

Conclusion of DMN1008UFDF-7

The DMN1008UFDF-7 from Diodes Incorporated is a high-performance MOSFET designed for automotive applications. Its unique features, such as low gate charge, high input capacitance, and low on-resistance, make it an excellent choice for high-power and high-efficiency applications. With its automotive-grade rating and RoHS compliance, the DMN1008UFDF-7 is a reliable and environmentally friendly solution for demanding automotive electronics.

FAQ

What is the standard lead time for DMN1008UFDF-7?
The standard lead time for DMN1008UFDF-7 is 8 Weeks.
Does DMN1008UFDF-7 have quantity-based pricing?
What is DMN1008UFDF-7?
Is DMN1008UFDF-7 currently in stock?
What package or case is DMN1008UFDF-7 available in?
Availability (In Stock : 33 )
Quantity Unit Price Ext. Price
5+ $0.36839 $1.84
50+ $0.29572 $14.79
150+ $0.26459 $39.69
ADD TO CART
QUICK ORDER
Unit Price $0.00000
Subtotal $0.00
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ