Diodes Incorporated_DMN1019USN-7
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Diodes Incorporated
DMN1019USN-7

278-DMN1019USN-7
PDF Datasheet
MOSFET N-CH 12V 9.3A SC59
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
22.2
Maximum Gate Source Leakage Current (nA)
2000
Input Capacitance (Ciss) (Max) @ Vds
2426 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
50.6 nC @ 8 V
Typical Rise Time (ns)
57.6
PPAP
No
Channel Mode
Enhancement
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DMN1019USN-7 Description

DMN1019USN-7 Description

The DMN1019USN-7 is a high-performance N-Channel MOSFET manufactured by Diodes Incorporated, designed for applications requiring robust power management and efficient switching capabilities. This MOSFET stands out for its superior electrical characteristics and compact SC59 package, making it ideal for space-constrained designs.

DMN1019USN-7 Features

  • Technology: Utilizes advanced MOSFET (Metal Oxide) technology for reliable performance.
  • Input Capacitance (Ciss): Offers a maximum of 2426 pF at 10 V, ensuring fast switching and minimal signal distortion.
  • Gate Charge (Qg): Features a maximum of 50.6 nC at 8 V, reducing switching losses and improving efficiency.
  • Drain to Source Voltage (Vdss): Capable of withstanding 12 V, suitable for various power electronics applications.
  • Power Dissipation (Max): Can handle up to 680mW at ambient temperature, ensuring reliable operation under various thermal conditions.
  • Rds On (Max): Exhibits a low resistance of 10mOhm at 9.7A and 4.5V, minimizing power loss during conduction.
  • Current - Continuous Drain (Id): Supports a continuous drain current of 9.3A at 25°C, making it suitable for high-current applications.
  • Drive Voltage: Operates with a maximum gate-source voltage of ±8V, allowing for flexible control options.
  • Mounting Type: Surface Mount, facilitating integration into compact and densely populated circuits.
  • REACH Status: REACH Unaffected, ensuring compliance with European Union regulations on chemical substances.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards for hazardous substances.

DMN1019USN-7 Applications

The DMN1019USN-7 is particularly well-suited for applications where high efficiency, low power loss, and compact design are crucial. Some specific use cases include:

  • Power Management: In power supply circuits, battery management systems, and motor control applications.
  • Automotive Electronics: For in-vehicle infotainment systems, lighting control, and engine management.
  • Industrial Control Systems: In motor drives, variable frequency drives, and process control applications.
  • Consumer Electronics: For power management in smartphones, laptops, and other portable devices.

Conclusion of DMN1019USN-7

The DMN1019USN-7 from Diodes Incorporated is a versatile and high-performing N-Channel MOSFET. Its unique combination of low Rds On, high input capacitance, and robust power dissipation capabilities make it an excellent choice for a wide range of power electronics applications. With its compact SC59 package and adherence to stringent environmental and safety standards, the DMN1019USN-7 is a reliable component for designers seeking to optimize performance and minimize space in their electronic devices.

FAQ

What operating temperature range does DMN1019USN-7 support?
DMN1019USN-7 has an operating temperature range of -55°C ~ 150°C (TJ).
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Are there related or alternative parts for DMN1019USN-7?
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Availability (In Stock : 21701 )
Quantity Unit Price Ext. Price
50+ $0.16808 $8.40
150+ $0.15032 $22.55
500+ $0.12817 $64.09
3000+ $0.11585 $347.55
6000+ $0.10992 $659.52
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