Diodes Incorporated_DMN1054UCB4-7
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Diodes Incorporated
DMN1054UCB4-7

278-DMN1054UCB4-7
PDF Datasheet
MOSFET N-CH 8V 2.7A X1-WLB0808-4
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Tech Specifications

Configuration
Single Dual Source
Typical Turn-Off Delay Time (ns)
16.6
Input Capacitance (Ciss) (Max) @ Vds
908 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Typical Rise Time (ns)
6.7
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
5.2
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DMN1054UCB4-7 Description

DMN1054UCB4-7 Description

The DMN1054UCB4-7 is a high-performance MOSFET (Metal Oxide) from Diodes Incorporated, designed for a wide range of applications in the electronics industry. This single N-Channel FET offers excellent electrical characteristics and robust performance, making it an ideal choice for various power management and signal processing tasks. With a maximum drain-source voltage (Vdss) of 8V and a continuous drain current (Id) of 2.7A at 25°C, the DMN1054UCB4-7 delivers reliable and efficient power handling capabilities.

DMN1054UCB4-7 Features

  • Input Capacitance (Ciss): The DMN1054UCB4-7 boasts a low input capacitance of 908 pF @ 6V, which helps reduce switching losses and improve overall efficiency.
  • Gate Charge (Qg): With a maximum gate charge of 15 nC @ 4.5V, this MOSFET ensures fast switching speeds and minimal power consumption during operation.
  • Rds On (Max): The device offers a low on-resistance of 42 mOhm @ 1A, 4.5V, contributing to reduced power dissipation and improved performance.
  • Vgs(th) (Max): The DMN1054UCB4-7 has a low threshold voltage of 700mV @ 250µA, allowing for easy gate drive and reduced power consumption.
  • Power Dissipation (Max): This MOSFET can handle a maximum power dissipation of 740mW (Ta), making it suitable for high-power applications.
  • Mounting Type: The DMN1054UCB4-7 is available in a surface-mount package, which enables easy integration into various electronic systems.

DMN1054UCB4-7 Applications

The DMN1054UCB4-7 is ideal for a variety of applications where high efficiency, low power consumption, and reliable performance are critical. Some specific use cases include:

  1. Power Management: Due to its low on-resistance and high current handling capabilities, the DMN1054UCB4-7 is well-suited for power management applications in consumer electronics, such as smartphones, laptops, and tablets.
  2. Signal Processing: The low input capacitance and fast switching speeds make this MOSFET an excellent choice for signal processing applications, including audio amplifiers and communication systems.
  3. Automotive Electronics: The DMN1054UCB4-7's robust performance and reliability make it suitable for automotive electronics, such as infotainment systems and power control modules.

Conclusion of DMN1054UCB4-7

In conclusion, the DMN1054UCB4-7 from Diodes Incorporated is a versatile and high-performance MOSFET that offers a unique combination of low on-resistance, fast switching speeds, and excellent power handling capabilities. Its surface-mount package and low power consumption make it an ideal choice for a wide range of applications in the electronics industry, including power management, signal processing, and automotive electronics. With its unique features and advantages over similar models, the DMN1054UCB4-7 is a reliable and efficient solution for demanding applications.

FAQ

What package or case is DMN1054UCB4-7 available in?
DMN1054UCB4-7 is available in the 4-XFBGA, WLBGA package / case.
What operating temperature range does DMN1054UCB4-7 support?
What is the mounting type of DMN1054UCB4-7?
What is the standard lead time for DMN1054UCB4-7?
What is DMN1054UCB4-7?
Availability (In Stock : 1663 )
Quantity Unit Price Ext. Price
1+ $0.50915 $0.51
10+ $0.45600 $4.56
30+ $0.43028 $12.91
100+ $0.40285 $40.28
500+ $0.38743 $193.72
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