Diodes Incorporated_DMN10H220LQ-7
original

Diodes Incorporated
DMN10H220LQ-7

278-DMN10H220LQ-7
PDF Datasheet
MOSFET N-CH 100V 1.6A SOT23-3
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
7.9
Input Capacitance (Ciss) (Max) @ Vds
401 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Typical Rise Time (ns)
8.2
PPAP
Yes
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
6.8
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DMN10H220LQ-7 Description

DMN10H220LQ-7 Description

The DMN10H220LQ-7 is a high-performance N-Channel MOSFET from Diodes Incorporated. It is designed to deliver exceptional performance in a wide range of applications. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.6A at 25°C, this MOSFET is capable of handling high power levels. Its low on-resistance (Rds On) of 220mOhm at 1.6A and 10V ensures minimal power dissipation, making it ideal for energy-efficient designs. The DMN10H220LQ-7 is also compliant with the latest environmental regulations, including RoHS3 and REACH.

DMN10H220LQ-7 Features

  • Low On-Resistance: The DMN10H220LQ-7 boasts an ultra-low on-resistance (Rds On) of 220mOhm at 1.6A and 10V, which minimizes power loss and improves efficiency in high-current applications.
  • High Drain-to-Source Voltage: With a Vdss of 100V, this MOSFET can handle high voltage applications, making it suitable for a wide range of power electronics.
  • Low Gate Charge: The DMN10H220LQ-7 has a low gate charge (Qg) of 8.3nC at 10V, which reduces switching losses and improves overall efficiency.
  • Robust Package: The SOT23-3 package is designed for surface mount applications, providing a compact and reliable solution for space-constrained designs.
  • Environmental Compliance: This MOSFET is RoHS3 compliant and REACH unaffected, ensuring compliance with the latest environmental regulations.

DMN10H220LQ-7 Applications

The DMN10H220LQ-7 is ideal for a variety of applications where high efficiency, low power loss, and high voltage handling are critical. Some specific use cases include:

  1. Power Management: In power supply designs, the DMN10H220LQ-7's low on-resistance and high voltage capability make it an excellent choice for power switches and regulators.
  2. Motor Control: The high current handling and low gate charge of this MOSFET make it suitable for motor control applications, where fast switching and low power loss are essential.
  3. Automotive Electronics: The DMN10H220LQ-7's robustness and compliance with environmental regulations make it a reliable choice for automotive electronics, such as in-vehicle power supplies and motor control systems.

Conclusion of DMN10H220LQ-7

The DMN10H220LQ-7 is a high-performance N-Channel MOSFET that offers a unique combination of low on-resistance, high voltage handling, and environmental compliance. Its advanced features make it an ideal choice for a wide range of applications, including power management, motor control, and automotive electronics. With its exceptional performance and reliability, the DMN10H220LQ-7 is a valuable addition to any high-efficiency, high-voltage design.

FAQ

What voltage specification is listed for DMN10H220LQ-7?
The listed voltage-related specification for DMN10H220LQ-7 is 100 V.
Does DMN10H220LQ-7 have quantity-based pricing?
What is DMN10H220LQ-7?
Are there related or alternative parts for DMN10H220LQ-7?
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Availability (In Stock : 2075 )
Quantity Unit Price Ext. Price
5+ $0.16560 $0.83
50+ $0.13716 $6.86
150+ $0.12293 $18.44
500+ $0.11227 $56.13
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