Diodes Incorporated_DMN2011UFDE-7
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Diodes Incorporated
DMN2011UFDE-7

278-DMN2011UFDE-7
PDF Datasheet
MOSFET N-CH 20V 11.7A 6UDFN
8 Weeks

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Tech Specifications

Configuration
Single Quad Drain
Typical Turn-Off Delay Time (ns)
21.6
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
2248 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Typical Rise Time (ns)
2.6
PPAP
No
Channel Mode
Enhancement
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DMN2011UFDE-7 Description

DMN2011UFDE-7 Description

The DMN2011UFDE-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed to meet the demands of modern electronic systems. This MOSFET features a 20V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of up to 11.7A at 25°C. With a maximum power dissipation of 610mW (Ta), the DMN2011UFDE-7 is suitable for a wide range of applications requiring high efficiency and reliability.

DMN2011UFDE-7 Features

  • Input Capacitance (Ciss): The DMN2011UFDE-7 boasts an ultra-low input capacitance of 2248 pF @ 10V, enabling fast switching and reduced power consumption.
  • Gate Charge (Qg): With a maximum gate charge of 56 nC @ 10V, this MOSFET minimizes switching losses and improves overall efficiency.
  • Rds On (Max): The device offers a low on-resistance of 9.5mOhm @ 7A, 4.5V, ensuring minimal power loss and high efficiency in high-current applications.
  • Vgs(th) (Max): The DMN2011UFDE-7 has a low threshold voltage of 1V @ 250µA, allowing for easy gate drive and reduced gate power consumption.
  • Mounting Type: The device is available in a surface-mount package, making it ideal for space-constrained applications.
  • REACH and RoHS Compliance: The DMN2011UFDE-7 is REACH unaffected and RoHS3 compliant, ensuring environmental responsibility and regulatory compliance.

DMN2011UFDE-7 Applications

The DMN2011UFDE-7 is an ideal choice for various applications, including:

  • Power Management: Its high current handling capability makes it suitable for power management circuits in consumer electronics.
  • Motor Control: The low on-resistance and fast switching speed make it an excellent choice for motor control applications, such as in industrial automation and robotics.
  • Automotive Electronics: The DMN2011UFDE-7 can be used in automotive electronics for applications like power windows, seat adjustment, and other electric systems.
  • Telecommunications: Its low capacitance and fast switching speed make it ideal for high-speed telecommunications equipment, such as routers and switches.

Conclusion of DMN2011UFDE-7

The DMN2011UFDE-7 is a versatile and high-performance N-Channel MOSFET that offers a unique combination of low on-resistance, fast switching speed, and low input capacitance. Its compliance with REACH and RoHS regulations, along with its surface-mount packaging, make it an excellent choice for a wide range of applications in power management, motor control, automotive electronics, and telecommunications. With its superior performance and reliability, the DMN2011UFDE-7 stands out as a top choice for demanding electronic systems.

FAQ

What is DMN2011UFDE-7?
DMN2011UFDE-7 is a Single FETs, MOSFETs from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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