Diodes Incorporated_DMN2300UFD-7
original

Diodes Incorporated
DMN2300UFD-7

278-DMN2300UFD-7
PDF Datasheet
MOSFET N-CH 20V 1.21A 3DFN
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
21.71
Input Capacitance (Ciss) (Max) @ Vds
67.62 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
2 nC @ 4.5 V
Typical Rise Time (ns)
6.93
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
4.92
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DMN2300UFD-7 Description

DMN2300UFD-7 Description

The DMN2300UFD-7 from Diodes Incorporated is a N-channel MOSFET designed for high-efficiency power management in compact, surface-mount applications. With a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1.21A, this MOSFET is optimized for low-voltage, high-performance switching. It features a low on-resistance (Rds(on)) of 200mΩ at 900mA and 4.5V gate drive, ensuring minimal power loss and improved thermal performance. Packaged in a 3DFN (Dual Flat No-Lead) format, it is ideal for space-constrained designs requiring high power density.

DMN2300UFD-7 Features

  • Low Gate Charge (Qg): 2nC at 4.5V enables fast switching, reducing switching losses in high-frequency applications.
  • Low Input Capacitance (Ciss): 67.62pF at 25V minimizes gate drive requirements, enhancing efficiency.
  • Wide Gate-Source Voltage Range (Vgs): ±8V ensures robust operation under varying drive conditions.
  • High Power Dissipation: 470mW (Ta) allows reliable performance in thermally challenging environments.
  • RoHS3 & REACH Compliant: Meets stringent environmental and safety standards.
  • Moisture Sensitivity Level (MSL) 1: Suitable for unlimited floor life, simplifying storage and handling.

DMN2300UFD-7 Applications

This MOSFET excels in low-voltage DC-DC converters, load switches, battery management systems, and portable electronics due to its low Rds(on) and fast switching characteristics. It is particularly well-suited for:

  • Power management in smartphones, tablets, and wearables where space and efficiency are critical.
  • USB power delivery circuits requiring high current handling in minimal PCB area.
  • Motor control in small robotics due to its low gate drive requirements and thermal efficiency.

Conclusion of DMN2300UFD-7

The DMN2300UFD-7 stands out as a high-performance, compact MOSFET for modern low-voltage applications. Its low on-resistance, fast switching, and robust thermal performance make it a superior choice over comparable models in its class. Whether for consumer electronics, industrial controls, or battery-powered devices, this MOSFET delivers reliability and efficiency in a miniature footprint. Its compliance with RoHS3 and REACH further ensures it meets global environmental standards, making it a future-proof component for sustainable designs.

FAQ

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The standard lead time for DMN2300UFD-7 is 8 Weeks.
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